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ES1B/1

Description
DIODE GEN PURP 100V 1A DO214AC
Categorysemiconductor    Discrete semiconductor   
File Size82KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric Compare View All

ES1B/1 Overview

DIODE GEN PURP 100V 1A DO214AC

ES1B/1 Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf920mV @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)25ns
Current at different Vr - Reverse leakage current5µA @ 100V
Capacitance at different Vr, F10pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-214AC,SMA
Supplier device packagingDO-214AC(SMA)
Operating Temperature - Junction-55°C ~ 150°C
ES1A, ES1B, ES1C, ES1D
www.vishay.com
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Glass passivated pellet chip junction
• Ultrafast recovery times for high efficiency
Available
• Low forward voltage, low power losses
• High forward surge capability
• Meets MSL level 1, per J-STD-020, LF maximum peak
of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: P/NHE3 or P/NHM3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
SMA
(DO-214AC)
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
t
rr
V
F
at I
F
T
J
max.
Package
Diode variations
1.0 A
50 V, 100 V, 150 V, 200 V
30 A
15 ns
0.92 V
150 °C
SMA (DO-214AC)
Single
For use in high frequency rectification and freewheeling
application in switching mode converters and inverters for
consumer, computer, automotive and telecommunication.
MECHANICAL DATA
Case:
SMA (DO-214AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/N-M3 - halogen-free, RoHS-compliant, commercial
grade
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
Base P/NHM3_X - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3, M3, HE3, and HM3 suffix meets JESD 201 class 2
whisker test
Polarity:
color band denotes cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
ES1A
EA
50
35
50
ES1B
EB
100
70
100
1.0
30
-55 to +150
ES1C
EC
150
105
150
ES1D
ED
200
140
200
V
V
V
A
A
°C
UNIT
Revision: 21-Jul-17
Document Number: 88586
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

ES1B/1 Related Products

ES1B/1 ES1D/1 ES1D-M3/5AT
Description DIODE GEN PURP 100V 1A DO214AC DIODE GEN PURP 200V 1A DO214AC DIODE GEN PURP 200V 1A DO214AC
Diode type standard standard RECTIFIER DIODE
Voltage - DC Reverse (Vr) (Maximum) 100V 200V -
Current - average rectification (Io) 1A 1A -
Voltage at different If - Forward (Vf 920mV @ 1A 920mV @ 1A -
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) -
Reverse recovery time (trr) 25ns 25ns -
Current at different Vr - Reverse leakage current 5µA @ 100V 5µA @ 200V -
Capacitance at different Vr, F 10pF @ 4V,1MHz 10pF @ 4V,1MHz -
Installation type surface mount surface mount -
Package/casing DO-214AC,SMA DO-214AC,SMA -
Supplier device packaging DO-214AC(SMA) DO-214AC(SMA) -
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -
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