DB151S THRU DB157S
Technical Data
Data Sheet N1476, Rev. C
GLASS PASSIVATED SILICON BRIDGE RECTIFIERS
Features
Glass passivated die construction
Low forward voltage drop
High current capability
High surge current capability
Designed for surface mount application
Plastic material-UL flammability 94V-0
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
Additional testing can be offered upon request
DB151S THRU DB157S
SINGLE-PHASE
DB-S
Circuit Diagram
Mechanical Data
Case: DB-S, molded plastic
Terminals: plated leads solderable per MIL-STD-202,
Method 208
Polarity: as marked on case
Mounting position: Any
Lead Free: For RoHS / Lead Free Version,
Maximum Ratings
@T
A
=25°C unless otherwise specified
Single Phase half wave 60Hz, resistive or inductive load. For capacitive load current derate by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Output Current
(Note 1)
@ T
C
=100°C
Non-Repetitive Peak Forward Surge
Current 8.3ms Single half sine-wave
superimposed on rated load (JEDEC
Method)
I
2
t Rating for Fusing (t < 8.3ms)
Symbol
V
RRM
V
RWM
V
R
V
RMS
I
F(AV)
DB
151S
50
35
DB
152S
100
70
DB
153S
200
140
DB
154S
400
280
1.5
DB
155S
600
420
DB
156S
800
560
DB
157S
1000
700
Units
V
V
A
I
FSM
55
A
I
2
t
12.6
A
2
s
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DB151S THRU DB157S
Technical Data
Data Sheet N1476, Rev. C
Electrical Characteristics
@T
A
=25°C unless otherwise specified
Characteristic
Maximum Forward Voltage Drop
*
per Bridge Element @I
F
=1.5A, T
J
=25°C
Peak Reverse Current
*
@T
A
= 25°C
At Rated DC Blocking Voltage
*
@T
A
= 125°C
Typical Junction Capacitance (Note 2)
* Pulse width < 300 µs, duty cycle < 2%
Symbol
V
F
I
R
C
J
DB
151S
DB
152S
DB
153S
DB
154S
1.0
5
200
25
DB
155S
DB
156S
DB
157S
Units
V
μA
pF
Thermal-Mechanical Specifications
@T
A
=25°C unless otherwise specified
Characteristic
Typical Thermal Resistance Junction to
Ambient
Typical Thermal Resistance Junction to Lead
Symbol
R
θJA
R
θJL
DB
151S
DB
152S
DB
153S
DB
154S
40
15
-55 to + 150
DB
155S
DB
156S
DB
157S
Units
°C/W
°C/W
°C
Operating Junction and Storage Temperature
T
J ,
T
STG
Range
Note: 1. Mounted on glass epoxy PC board with 1.3mm
2
solder pad.
2. Measured at 1.0 MHZ and applied reverse voltage of 4.0 VDC
Ratings and Characteristics Curves
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DB151S THRU DB157S
Technical Data
Data Sheet N1476, Rev. C
Mechanical Dimensions DB-S(Inches/Millimeters)
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DB151S THRU DB157S
Technical Data
Data Sheet N1476, Rev. C
Ordering Information
Device
DB151S
THRU
DB157S
Marking Diagram
Plating
Pure Sn
Package
DB-S
(Pb-Free)
Shipping
1500pcs / reel
Where XXXXX is YYWWL
DB151S
YY
WW
L
= Type Number
= Year
= Week
= Lot Number
For information on tape and reel specifications, including part
orientation and tape sizes, please refer to our tape and reel
packaging specification.
Cautions：Molding
resin
Epoxy resin UL:94V-0
Carrier Tape Specification DB-S
SYMBOL
A0
B0
D0
D1
P0
P1
P2
E
K0
F
W
T
10P0
Millimeters
Min.
Max.
8.95
8.65
10.31
1.50
1.40
3.90
11.90
10.51
1.60
1.60
4.10
12.10
2.10
1.85
3.41
7.60
16.30
0.40
40.20
1.90
1.65
3.21
7.40
15.70
0.30
39.80
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DB151S THRU DB157S
Technical Data
Data Sheet N1476, Rev. C
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC Diode Solutions sales department for the latest version of
the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall
SMC Diode Solutions
be liable for any damages that may result from an accident or any other cause during
operation of the user’s units according to the datasheet(s).
SMC Diode Solution
assumes no responsibility for any intellectual property
claims or any other problems that may result from applications of information, products or circuits described in the datasheets.
4- In no event shall
SMC Diode Solutions
be liable for any failure in a semiconductor device or any secondary damage resulting from use
at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or
SMC Diode Solutions.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of
SMC
Diode Solutions.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will
hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third
party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and
regulations..
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