MBM29DL400TC/BC
-55/70/90
Data Sheet
(Retired Product)
This product has been retired and is not recommended for new designs. Availability of this document is retained for reference
and historical purposes only.
Continuity of Specifications
There is no change to this data sheet as a result of offering the device as a Spansion product. Any changes that have been
made are the result of normal data sheet improvement and are noted in the document revision summary.
For More Information
Please contact your local sales office for additional information about Spansion memory solutions.
Publication Number
MBM29DL400TC/BC
Revision
DS05-20866-7E
Issue Date
July 31, 2007
SPANSION
Data Sheet
TM
Flash Memory
September 2003
TM
This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and
Fujitsu. Although the document is marked with the name of the company that originally developed the specification,
these products will be offered to customers of both AMD and Fujitsu.
Continuity of Specifications
There is no change to this datasheet as a result of offering the device as a SPANSION
TM
product. Future routine
revisions will occur when appropriate, and changes will be noted in a revision summary.
Continuity of Ordering Part Numbers
AMD and Fujitsu continue to support existing part numbers beginning with "Am" and "MBM". To order these
products, please use only the Ordering Part Numbers listed in this document.
For More Information
Please contact your local AMD or Fujitsu sales office for additional information about SPANSION
solutions.
TM
memory
FUJITSU SEMICONDUCTOR
DATA SHEET
DS05-20866-7E
FLASH MEMORY
CMOS
4 M (512 K
×
8/256 K
×
16) BIT
MBM29DL400TC/BC
-55/70/90
■
DESCRIPTION
The MBM29DL400TC/BC are a 4 M-bit, 3.0 V-only Flash memory organized as 512 Kbytes of 8 bits each or 256
Kwords of 16 bits each. The MBM29DL400TC/BC are offered in a 48-pin TSOP (1) package. These devices are
designed to be programmed in-system with the standard system 3.0 V V
CC
supply. 12.0 V V
PP
and 5.0 V V
CC
are
not required for write or erase operations. The devices can also be reprogrammed in standard EPROM program-
mers.
MBM29DL400TC/BC provides simultaneous operation which can read data while program/erase. The simulta-
neous operation architecture provides simultaneous operation by dividing the memory space into two banks. The
devices can allow a host system to program or erase in one bank, then immediately and simultaneously read
from the other bank.
(Continued)
■
PRODUCT LINE UP
Part No.
Power Supply Voltage V
CC
(V)
Max Address Access Time (ns)
Max CE Access Time (ns)
Max OE Access Time (ns)
55
55
30
MBM29DL400TC/MBM29DL400BC
−55
3.3
+0.3
−0.3
−70
70
70
30
−90
3.0
+0.6
−0.3
90
90
35
■
PACKAGES
48-pin plastic TSOP (1)
Marking Side
48-pin plastic TSOP (1)
48-pin plastic FBGA
Marking Side
(FPT-48P-M19)
(FPT-48P-M20)
(BGA-48P-M11)
Retired Product DS05-20866-7E_July 31, 2007
MBM29DL400TC/BC
-55/70/90
(Continued)
The standard MBM29DL400TC/BC offer access times 55 ns, 70 ns and 90 ns, allowing operation of high-speed
microprocessors without wait states. To eliminate bus contention the devices feature separate chip enable
(CE) , write enable (WE) , and output enable (OE) controls.
The MBM29DL400TC/BC are pin and command set compatible with JEDEC standard E
2
PROMs. Commands
are written to the command register using standard microprocessor write timings. Register contents serve as
input to an internal state-machine which controls the erase and programming circuitry. Write cycles also internally
latch addresses and data needed for the programming and erase operations. Reading data out of the devices
is similar to reading from 5.0 V and 12.0 V Flash or EPROM devices.
The MBM29DL400TC/BC are programmed by executing the program command sequence. This will invoke the
Embedded Program Algorithm which is an internal algorithm that automatically times the program pulse widths
and verifies proper cell margin. Typically, each sector can be programmed and verified in about 0.5 seconds.
Erase is accomplished by executing the erase command sequence. This will invoke the Embedded Erase
Algorithm which is an internal algorithm that automatically preprograms the array if it is not already programmed
before executing the erase operation. During erase, the devices automatically time the erase pulse widths and
verify proper cell margin.
One sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The devices also feature a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29DL400TC/BC are erased when shipped from the
factory.
The devices feature single 3.0 V power supply operation for both read and write functions. Internally generated
and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically
inhibits write operations on the loss of power. The end of program or erase is detected by Data Polling of DQ
7
,
by the Toggle Bit feature on DQ
6
, or the RY/BY output pin. Once the end of a program or erase cycle is completed,
the devices internally reset to the read mode.
Fujitsu’s Flash technology integrates years of EPROM and E
2
PROM experience to produce the highest levels
of quality, reliability, and cost effectiveness. The MBM29DL400TC/BC memories electrically erase the entire
chip or all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The bytes/words are programmed
one byte/word at a time using the EPROM programming mechanism of hot electron injection.
Retired Product DS05-20866-7E_July 31, 2007
5
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