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12F80B

Description
12 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA
CategoryDiscrete semiconductor    diode   
File Size335KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

12F80B Overview

12 A, 800 V, SILICON, RECTIFIER DIODE, DO-203AA

12F80B Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionO-MUPM-D1
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.2 V
JEDEC-95 codeDO-203AA
JESD-30 codeO-MUPM-D1
Maximum non-repetitive peak forward current300 A
Number of components1
Phase1
Number of terminals1
Maximum operating temperature200 °C
Maximum output current12 A
Package body materialMETAL
Package shapeROUND
Package formPOST/STUD MOUNT
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse recovery time5 µs
surface mountNO
Terminal formSOLDER LUG
Terminal locationUPPER
Base Number Matches1

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