Preliminary
Datasheet
BCR6CM-12RA
600V - 6A - Triac
Medium Power Use
Features
•
I
T (RMS)
: 6 A
•
V
DRM
: 600 V
•
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA (20 mA)
Note6
•
Non-Insulated Type
•
Planar Passivation Type
R07DS1150EJ0100
Rev.1.00
Jan 24, 2014
Outline
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
2, 4
1.
2.
3.
4.
T
1
Terminal
T
2
Terminal
Gate Terminal
T
2
Terminal
3
1
1
2
3
Applications
Electric rice cooker, electric pot, and controller for other heater
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Symbol
V
DRM
V
DSM
Ratings
6
60
15
5
0.5
10
2
– 40 to +125
– 40 to +125
2.1
Unit
A
A
A
2
s
W
W
V
A
°C
°C
g
Voltage class
12
600
720
Conditions
Commercial frequency, sine full wave
Note3
360° conduction, Tc = 103°C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Unit
V
V
Typical value
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Page 1 of 6
R07DS1150EJ0100
Preliminary
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
Symbol
I
DRM
V
TM
V
FGT
Ι
V
RGT
Ι
V
RGT
ΙΙΙ
I
FGT
Ι
I
RGT
Ι
I
RGT
ΙΙΙ
V
GD
R
th (j-c)
Min.
—
—
—
—
—
—
—
—
0.2
—
Typ.
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.7
1.5
1.5
1.5
30
Note6
30
Note6
30
Note6
—
2.5
Unit
mA
V
V
V
V
mA
mA
mA
V
°C/W
Test conditions
Tj = 125°C, V
DRM
applied
Tc = 25°C, I
TM
= 9 A,
Instantaneous measurement
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 25°C, V
D
= 6 V, R
L
= 6
Ω,
R
G
= 330
Ω
Tj = 125°C,
V
D
= 1/2 V
DRM
Junction to case
Note3 Note4
Gate trigger current
Note2
Gate non-trigger voltage
Thermal resistance
Notes: 1.
2.
3.
4.
5.
Gate open.
Measurement using the gate trigger characteristics measurement circuit.
Case temperature is measured at the T
2
tab 1.5 mm away from the molded case.
The contact thermal resistance R
th (c-f)
in case of greasing is 1.0°C/W.
High sensitivity (I
GT
≤
20 mA) is also available. (I
GT
item: 1)
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Page 2 of 6
R07DS1150EJ0100
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
100
Rated Surge On-State Current
Surge On-State Current (A)
90
80
70
60
50
40
30
20
10
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
3
2
10
1
7
5
3
2
10
0
7
5
0.5
1.0
1.5
2.0
2.5
Tj = 150°C
Tj = 25°C
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
3
2
V
GM
= 10V P
G(AV)
= 0.5W
P
GM
= 5W
10
1
7
5
I
GM
= 2A
3
V
GT
= 1.5V
2
10
0
7
5
3
2
10
–1
7
I
FGT I
I
RGT I
, I
RGT III
V
GD
= 0.2V
5
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
Gate Voltage (V)
I
RGT III
I
FGT I
I
RGT I
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
2 3 5 7 10
3
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
10
–1
2 3 5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Page 3 of 6
R07DS1150EJ0100
Preliminary
Allowable Case Temperature vs.
RMS On-State Current
160
140
Maximum On-State Power Dissipation
20
On-State Power Dissipation (W)
18
16
Case Temperature (°C)
360° Conduction
14
Resistive,
12
inductive loads
10
8
6
4
2
0
0
1
2
3
4
5
6
7
8
9 10
120
100
Curves apply regardless
of conduction angle
80
60
40
360° Conduction
20
Resistive,
inductive loads
0
0
1
2
3
4
5
6
7
8
RMS On-State Current (A)
RMS On-State Current (A)
Allowable Ambient Temperature vs.
RMS On-State Current
160
160
Allowable Ambient Temperature vs.
RMS On-State Current
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
Ambient Temperature (°C)
120
100
80
120
×
120
×
t2.3
100
×
100
×
t2.3
60
×
60
×
t2.3
Ambient Temperature (°C)
8
140
140
120
100
80
60
40
20
0
0
0.5
60
All fins are black painted
aluminum and greased
40
Curves apply regardless
of conduction angle
20
Resistive, inductive loads
Natural convection
0
0
1
2
3
4
5
6
7
1.0
1.5
2.0
2.5
3.0
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
Typical Example
Typical Example
10
5
10
4
10
2
7
5
4
3
2
10
3
10
2
–60 –40 –20 0 20 40 60 80 100 120 140 160
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Page 4 of 6
R07DS1150EJ0100
Latching Current vs.
Junction Temperature
10
3
7
5
Preliminary
Breakover Voltage vs.
Junction Temperature
160
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
Typical Example
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Latching Current (mA)
3
2
Distribution
T
2
+, G–
Typical Example
10
2
7
5
3
2
10
1
7
5
3
2
T
2
+, G+
Typical Example
T
2
–, G–
10
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
Gate Trigger Current (tw)
×
100 (%)
Gate Trigger Current (DC)
160
140
120
100
80
60
40
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Gate Trigger Current vs.
Gate Current Pulse Width
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1 0
10
2 3 4 5 7 10
1
2 3 4 5 7 10
2
Typical Example
Tj = 125°C
I
FGT I
I
RGT I
Typical Example
I
RGT III
III Quadrant
I Quadrant
Rate of Rise of Off-State Voltage (V/μs)
Gate Current Pulse Width (μs)
Gate Trigger Characteristics Test Circuits
6Ω
6Ω
6V
V
A
330Ω
6V
V
A
330Ω
Test Procedure I
6Ω
Test Procedure II
6V
V
A
330Ω
Test Procedure III
R07DS1150EJ0100 Rev.1.00
Jan 24, 2014
Page 5 of 6
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