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BS108/01,126

Description
MOSFET N-CH 200V 300MA SOT54
Categorysemiconductor    Discrete semiconductor   
File Size54KB,8 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BS108/01,126 Overview

MOSFET N-CH 200V 300MA SOT54

BS108/01,126 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)200V
Current - Continuous Drain (Id) at 25°C300mA(Ta)
Drive voltage (maximum Rds On, minimum Rds On)2.8V
Rds On (maximum value) when different Id, Vgs5 ohms @ 100mA, 2.8V
Vgs (th) (maximum value) when different Id1.8V @ 1mA
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)120pF @ 25V
FET function-
Power dissipation (maximum)1W(Ta)
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-92-3
Package/casingTO-226-3, TO-92-3 (TO-226AA) (formed lead)
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D186
BS108
N-channel enhancement mode
vertical D-MOS transistor
Product specification
Supersedes data of 1997 Jun 17
2001 May 18

BS108/01,126 Related Products

BS108/01,126 BS108,126 BS108-T/R
Description MOSFET N-CH 200V 300MA SOT54 MOSFET N-CH 200V 300MA SOT54 TRANSISTOR 300 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, FET General Purpose Small Signal
Maker - NXP NXP
package instruction - PLASTIC, SPT, SC-43, 3 PIN CYLINDRICAL, O-PBCY-T3
Reach Compliance Code - unknown unknown
ECCN code - EAR99 EAR99
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage - 200 V 200 V
Maximum drain current (ID) - 0.3 A 0.3 A
Maximum drain-source on-resistance - 5 Ω 5 Ω
FET technology - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) - 15 pF 15 pF
JEDEC-95 code - TO-92 TO-92
JESD-30 code - O-PBCY-T3 O-PBCY-T3
JESD-609 code - e3 e3
Number of components - 1 1
Number of terminals - 3 3
Operating mode - ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - ROUND ROUND
Package form - CYLINDRICAL CYLINDRICAL
Polarity/channel type - N-CHANNEL N-CHANNEL
Certification status - Not Qualified Not Qualified
surface mount - NO NO
Terminal surface - Matte Tin (Sn) TIN
Terminal form - THROUGH-HOLE THROUGH-HOLE
Terminal location - BOTTOM BOTTOM
transistor applications - SWITCHING SWITCHING
Transistor component materials - SILICON SILICON
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