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BUK9528-100A,127

Description
MOSFET N-CH 100V 49A TO220AB
CategoryDiscrete semiconductor    The transistor   
File Size77KB,9 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BUK9528-100A,127 Overview

MOSFET N-CH 100V 49A TO220AB

BUK9528-100A,127 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-220
Contacts3
Manufacturer packaging codeSOT78A
Reach Compliance Codecompliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)45 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)49 A
Maximum drain current (ID)49 A
Maximum drain-source on-resistance0.028 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)166 W
Maximum pulsed drain current (IDM)195 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Philips Semiconductors
Product specification
TrenchMOS transistor
Logic level FET
GENERAL DESCRIPTION
N-channel enhancement mode logic
level field-effect power transistor in a
plastic envelope available in
TO220AB and SOT404 . Using
’trench’ technology which features
very low on-state resistance. It is
intended for use in automotive and
general
purpose
switching
applications.
BUK9528-100A
BUK9628-100A
QUICK REFERENCE DATA
SYMBOL
V
DS
I
D
P
tot
T
j
R
DS(ON)
PARAMETER
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance
V
GS
= 5 V
V
GS
= 10 V
MAX.
100
49
166
175
28
27
UNIT
V
A
W
˚C
mΩ
mΩ
PINNING
TO220AB & SOT404
PIN
1
2
3
DESCRIPTION
gate
drain
2
PIN CONFIGURATION
mb
tab
SYMBOL
d
g
3
SOT404
1 2 3
source
1
tab/mb drain
TO220AB
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
V
DS
V
DGR
±V
GS
±V
GSM
I
D
I
D
I
DM
P
tot
T
stg
, T
j
PARAMETER
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Non-repetitive gate-source voltage
Drain current (DC)
Drain current (DC)
Drain current (pulse peak value)
Total power dissipation
Storage & operating temperature
CONDITIONS
-
R
GS
= 20 kΩ
-
t
p
≤50µS
T
mb
= 25 ˚C
T
mb
= 100 ˚C
T
mb
= 25 ˚C
T
mb
= 25 ˚C
-
MIN.
-
-
-
-
-
-
-
-
- 55
MAX.
100
100
10
15
49
34
195
166
175
UNIT
V
V
V
V
A
A
A
W
˚C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
R
th j-a
PARAMETER
Thermal resistance junction to
mounting base
Thermal resistance junction to
ambient(TO220AB)
Thermal resistance junction to
ambient(SOT404)
CONDITIONS
-
in free air
Minimum footprint, FR4
board
TYP.
-
60
50
MAX.
0.9
-
-
UNIT
K/W
K/W
K/W
March 2000
1
Rev 1.000

BUK9528-100A,127 Related Products

BUK9528-100A,127 BUK9528-100A BUK9528-100A127
Description MOSFET N-CH 100V 49A TO220AB mosFET power rail pwr-mos MOSFET RAIL PWR-MOS
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE Single
Is it Rohs certified? conform to conform to -
Maker NXP NXP -
Reach Compliance Code compliant unknown -
ECCN code EAR99 EAR99 -
Avalanche Energy Efficiency Rating (Eas) 45 mJ 45 mJ -
Shell connection DRAIN DRAIN -
Minimum drain-source breakdown voltage 100 V 100 V -
Maximum drain current (Abs) (ID) 49 A 49 A -
Maximum drain current (ID) 49 A 49 A -
Maximum drain-source on-resistance 0.028 Ω 0.028 Ω -
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR -
JEDEC-95 code TO-220AB TO-220AB -
JESD-30 code R-PSFM-T3 R-PSFM-T3 -
JESD-609 code e3 e3 -
Number of components 1 1 -
Number of terminals 3 3 -
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE -
Maximum operating temperature 175 °C 175 °C -
Package body material PLASTIC/EPOXY PLASTIC/EPOXY -
Package shape RECTANGULAR RECTANGULAR -
Package form FLANGE MOUNT FLANGE MOUNT -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Polarity/channel type N-CHANNEL N-CHANNEL -
Maximum power dissipation(Abs) 166 W 166 W -
Maximum pulsed drain current (IDM) 195 A 195 A -
Certification status Not Qualified Not Qualified -
surface mount NO NO -
Terminal surface Matte Tin (Sn) Matte Tin (Sn) -
Terminal form THROUGH-HOLE THROUGH-HOLE -
Terminal location SINGLE SINGLE -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
transistor applications SWITCHING SWITCHING -
Transistor component materials SILICON SILICON -
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