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BGD906,112

Description
IC AMPLIFIER POWER SOT-115J
CategoryWireless rf/communication    Radio frequency and microwave   
File Size309KB,11 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BGD906,112 Overview

IC AMPLIFIER POWER SOT-115J

BGD906,112 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionSOT-115J
Reach Compliance Codeunknown
Other featuresLOW NOISE, HIGH RELIABILITY
Characteristic impedance75 Ω
structureMODULE
Gain22 dB
JESD-609 codee4
Maximum operating frequency900 MHz
Minimum operating frequency40 MHz
Maximum operating temperature100 °C
Minimum operating temperature-20 °C
Package body materialPLASTIC/EPOXY
Encapsulate equivalent codeSOT-115J
power supply24 V
RF/Microwave Device TypesWIDE BAND HIGH POWER
Maximum slew rate435 mA
technologyHYBRID
Terminal surfaceGold (Au)
DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D252
BGD906; BGD906MI
860 MHz, 21.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 2000 Mar 28
2001 Nov 01

BGD906,112 Related Products

BGD906,112 BGD906MI
Description IC AMPLIFIER POWER SOT-115J RF/Microwave Amplifier, 40 MHz - 900 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, SOT-115J, 7 PIN
Maker NXP NXP
package instruction SOT-115J SOT-115J
Reach Compliance Code unknown unknown
Other features LOW NOISE, HIGH RELIABILITY LOW NOISE, HIGH RELIABILITY
Characteristic impedance 75 Ω 75 Ω
structure MODULE MODULE
Gain 22 dB 22 dB
JESD-609 code e4 e4
Maximum operating frequency 900 MHz 900 MHz
Minimum operating frequency 40 MHz 40 MHz
Maximum operating temperature 100 °C 100 °C
Minimum operating temperature -20 °C -20 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Encapsulate equivalent code SOT-115J SOT-115J
power supply 24 V 24 V
RF/Microwave Device Types WIDE BAND HIGH POWER WIDE BAND HIGH POWER
Maximum slew rate 435 mA 435 mA
technology HYBRID HYBRID
Terminal surface Gold (Au) GOLD
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