MRF6P3300HR5 datasheet, PDF - EEWORLD Datasheet

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MRF6P3300HR5: DescriptionFET RF 68V 863MHZ NI-860C3; CategoryDiscrete semiconductor The transistor; File Size1MB，24 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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MRF6P3300HR5 Overview

FET RF 68V 863MHZ NI-860C3

MRF6P3300HR5 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	FLANGE MOUNT, R-CDFM-F4
Contacts	4
Manufacturer packaging code	CASE 375G-04
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	68 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F4
Number of components	1
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT APPLICABLE
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	761 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT APPLICABLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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Freescale Semiconductor

Technical Data

MRF6P3300HR3/HR5 replaced by MRFE6P3300HR3/HR5. Refer to Device Migration

PCN12895 for more details.

Document Number: MRF6P3300H

Rev. 2, 10/2008

RF Power Field Effect Transistor

N-Channel Enhancement-Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with fre‐

quencies from 470 to 860 MHz. The high gain and broadband performance of

this device make it ideal for large- signal, common- source amplifier applica‐

tions in 32 volt analog or digital television transmitter equipment.

•

Typical Narrowband Two-T one Performance @ 860 MHz: V

= 32 Volts,

= 1600 mA, P

out

= 270 Watts PEP

Power Gain — 20.2 dB

Drain Efficiency — 44.1%

IMD — -30.8 dBc

•

Typical Narrowband DVB-T OFDM Performance @ 860 MHz: V

32 Volts, I

= 1600 mA, P

out

= 60 Watts Avg., 8K Mode, 64 QAM

Power Gain — 20.4 dB

Drain Efficiency — 29%

ACPR @ 3.9 MHz Offset — -57 dBc @ 20 kHz Bandwidth

•

Capable of Handling 10:1 VSWR, @ 32 Vdc, 860 MHz, 300 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large-Signal Impedance Parameters

•

Internally Matched for Ease of Use

•

Designed for Push-Pull Operation Only

•

Qualified Up to a Maximum of 32 V

Operation

•

Integrated ESD Protection

•

RoHS Compliant

•

In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

R5 Suffix = 50 Units per 56 mm, 13 inch Reel.

MRF6P3300HR3

MRF6P3300HR5

470-860 MHz, 300 W, 32 V

LATERAL N-CHANNEL

RF POWER MOSFETs

ARCHIVE INFORMATION

CASE 375G-04, STYLE 1

NI-860C3

Table 1. Maximum Ratings

Rating

Drain-Source Voltage

Gate-Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

-0.5, +68

-0.5, +12

-65 to +150

150

225

Unit

Vdc

°C

Table 2. Thermal Characteristics

Characteristic

Thermal Resistance, Junction to Case

Case Temperature 80°C, 300 W CW

Case Temperature 82°C, 220 W CW

Case Temperature 79°C, 100 W CW

Case Temperature 81°C, 60 W CW

Symbol

θJC

0.23

0.24

0.27

Value

(2,3)

Unit

°C/W

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

3. Refer to AN1955,

Thermal Measurement Methodology of RF Power Amplifiers.

Go to http://www.freescale.com/rf.

Select Documentation/Application Notes - AN1955.

MRF6P3300HR3 MRF6P3300HR5

RF Device Data

Freescale Semiconductor

ARCHIVE INFORMATION

MRF6P3300HR5 Related Products

	MRF6P3300HR5	MRF6P3300HR3
Description	FET RF 68V 863MHZ NI-860C3	FET RF 68V 863MHZ NI-860C3
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-CDFM-F4	FLANGE MOUNT, R-CDFM-F4
Contacts	4	4
Manufacturer packaging code	CASE 375G-04	CASE 375G-04
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	SINGLE	SINGLE
Minimum drain-source breakdown voltage	68 V	68 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-CDFM-F4	R-CDFM-F4
Number of components	1	1
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT APPLICABLE	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	761 W	761 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT APPLICABLE	NOT SPECIFIED
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

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