MRF6S9045MR1 datasheet, PDF - EEWORLD Datasheet

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MRF6S9045MR1: DescriptionFET RF 68V 880MHZ TO-270-2; CategoryDiscrete semiconductor The transistor; File Size843KB，18 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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MRF6S9045MR1 Overview

FET RF 68V 880MHZ TO-270-2

MRF6S9045MR1 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	TO-270
package instruction	FLATPACK, R-PDFP-F2
Contacts	2
Manufacturer packaging code	CASE PLASTIC
Reach Compliance Code	not_compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	68 V
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-270
JESD-30 code	R-PDFP-F2
Humidity sensitivity level	3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLATPACK
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	175 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Base Number Matches	1

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Freescale Semiconductor

Technical Data

MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration

PCN12895 for more details. MRF6S9045NBR1 no longer manufactured.

Document Number: MRF6S9045N

Rev. 4, 8/2008

RF Power Field Effect Transistors

N - Channel Enhancement - Mode Lateral MOSFETs

Designed for broadband commercial and industrial applications with

frequencies up to 1000 MHz. The high gain and broadband performance of

these devices make them ideal for large - signal, common - source amplifier

applications in 28 volt base station equipment.

•

Typical Single - Carrier N - CDMA Performance @ 880 MHz, V

= 28 Volts,

= 350 mA, P

out

= 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,

Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =

9.8 dB @ 0.01% Probability on CCDF.

Power Gain — 22.7 dB

Drain Efficiency — 32%

ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth

GSM EDGE Application

•

Typical GSM EDGE Performance: V

= 28 Volts, I

= 350 mA,

out

= 16 Watts Avg., Full Frequency Band (921 - 960 MHz)

Power Gain — 20 dB

Drain Efficiency — 46%

Spectral Regrowth @ 400 kHz Offset = - 62 dBc

Spectral Regrowth @ 600 kHz Offset = - 78 dBc

EVM — 1.5% rms

GSM Application

•

Typical GSM Performance: V

= 28 Volts, I

= 350 mA, P

out

= 45 Watts,

Full Frequency Band (921 - 960 MHz)

Power Gain — 20 dB

Drain Efficiency — 68%

•

Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW

Output Power

Features

•

Characterized with Series Equivalent Large - Signal Impedance Parameters

•

Integrated ESD Protection

•

225°C Capable Plastic Package

•

N Suffix Indicates Lead - Free Terminations. RoHS Compliant.

•

TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,

13 inch Reel.

•

TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,

13 inch Reel.

MRF6S9045NR1

MRF6S9045NBR1

ARCHIVE INFORMATION

CASE 1265 - 09, STYLE 1

TO - 270- 2

PLASTIC

MRF6S9045NR1

CASE 1337 - 04, STYLE 1

TO - 272- 2

PLASTIC

MRF6S9045NBR1

Table 1. Maximum Ratings

Rating

Drain- Source Voltage

Gate- Source Voltage

Storage Temperature Range

Case Operating Temperature

Operating Junction Temperature

(1,2)

Symbol

DSS

stg

Value

- 0.5, +68

- 0.5, + 12

- 65 to +150

150

225

Unit

Vdc

°C

1. Continuous use at maximum temperature will affect MTTF.

2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access

MTTF calculators by product.

MRF6S9045NR1 MRF6S9045NBR1

RF Device Data

Freescale Semiconductor

ARCHIVE INFORMATION

880 MHz, 10 W AVG., 28 V

SINGLE N - CDMA

LATERAL N - CHANNEL

BROADBAND RF POWER MOSFETs

MRF6S9045MR1 Related Products

	MRF6S9045MR1	MRF6S9045MBR1	MRF6S9045NBR1	MRF6S9045NR1
Description	FET RF 68V 880MHZ TO-270-2	FET RF 68V 880MHZ TO-272-2	FET RF 68V 880MHZ TO-272-2	FET RF 68V 880MHZ TO-270-2
Is it Rohs certified?	conform to	incompatible	conform to	conform to
Maker	NXP	NXP	NXP	NXP
Parts packaging code	TO-270	TO-272	TO-272	TO-270
package instruction	FLATPACK, R-PDFP-F2	FLANGE MOUNT, R-PDFM-F2	FLANGE MOUNT, R-PDFM-F2	FLATPACK, R-PDFP-F2
Contacts	2	2	3	2
Manufacturer packaging code	CASE PLASTIC	CASE PLASTIC	CASE 1337-03	CASE 1265-08
Reach Compliance Code	not_compliant	not_compliant	not_compliant	not_compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Shell connection	SOURCE	SOURCE	SOURCE	SOURCE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	68 V	68 V	68 V	68 V
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-270	TO-272	TO-272	TO-270
JESD-30 code	R-PDFP-F2	R-PDFM-F2	R-PDFM-F2	R-PDFP-F2
Humidity sensitivity level	3	3	3	3
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	FLATPACK	FLANGE MOUNT	FLANGE MOUNT	FLATPACK
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	175 W	175 W	175 W	175 W
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES
Terminal form	FLAT	FLAT	FLAT	FLAT
Terminal location	DUAL	DUAL	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON
JESD-609 code	-	e0	e3	e3
Terminal surface	-	Tin/Lead (Sn/Pb)	Matte Tin (Sn)	Matte Tin (Sn)

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