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MRF6S9045NR1

Description
FET RF 68V 880MHZ TO-270-2
CategoryDiscrete semiconductor    The transistor   
File Size843KB,18 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric Compare View All

MRF6S9045NR1 Overview

FET RF 68V 880MHZ TO-270-2

MRF6S9045NR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeTO-270
package instructionFLATPACK, R-PDFP-F2
Contacts2
Manufacturer packaging codeCASE 1265-08
Reach Compliance Codenot_compliant
ECCN codeEAR99
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage68 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandULTRA HIGH FREQUENCY BAND
JEDEC-95 codeTO-270
JESD-30 codeR-PDFP-F2
JESD-609 codee3
Humidity sensitivity level3
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLATPACK
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)175 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Freescale Semiconductor
Technical Data
MRF6S9045NR1 replaced by MRFE6S9045NR1. Refer to Device Migration
PCN12895 for more details. MRF6S9045NBR1 no longer manufactured.
Document Number: MRF6S9045N
Rev. 4, 8/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for broadband commercial and industrial applications with
frequencies up to 1000 MHz. The high gain and broadband performance of
these devices make them ideal for large - signal, common - source amplifier
applications in 28 volt base station equipment.
Typical Single - Carrier N - CDMA Performance @ 880 MHz, V
DD
= 28 Volts,
I
DQ
= 350 mA, P
out
= 10 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging,
Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR =
9.8 dB @ 0.01% Probability on CCDF.
Power Gain — 22.7 dB
Drain Efficiency — 32%
ACPR @ 750 kHz Offset — - 47 dBc in 30 kHz Bandwidth
GSM EDGE Application
Typical GSM EDGE Performance: V
DD
= 28 Volts, I
DQ
= 350 mA,
P
out
= 16 Watts Avg., Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 46%
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 78 dBc
EVM — 1.5% rms
GSM Application
Typical GSM Performance: V
DD
= 28 Volts, I
DQ
= 350 mA, P
out
= 45 Watts,
Full Frequency Band (921 - 960 MHz)
Power Gain — 20 dB
Drain Efficiency — 68%
Capable of Handling 5:1 VSWR, @ 28 Vdc, 880 MHz, 45 Watts CW
Output Power
Features
Characterized with Series Equivalent Large - Signal Impedance Parameters
Integrated ESD Protection
225°C Capable Plastic Package
N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
MRF6S9045NR1
MRF6S9045NBR1
ARCHIVE INFORMATION
CASE 1265 - 09, STYLE 1
TO - 270- 2
PLASTIC
MRF6S9045NR1
CASE 1337 - 04, STYLE 1
TO - 272- 2
PLASTIC
MRF6S9045NBR1
Table 1. Maximum Ratings
Rating
Drain- Source Voltage
Gate- Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
(1,2)
Symbol
V
DSS
V
GS
T
stg
T
C
T
J
Value
- 0.5, +68
- 0.5, + 12
- 65 to +150
150
225
Unit
Vdc
Vdc
°C
°C
°C
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
MTTF calculators by product.
©
Freescale Semiconductor, Inc., 2005 - 2006, 2008. All rights reserved.
MRF6S9045NR1 MRF6S9045NBR1
1
RF Device Data
Freescale Semiconductor
ARCHIVE INFORMATION
880 MHz, 10 W AVG., 28 V
SINGLE N - CDMA
LATERAL N - CHANNEL
BROADBAND RF POWER MOSFETs

MRF6S9045NR1 Related Products

MRF6S9045NR1 MRF6S9045MBR1 MRF6S9045MR1 MRF6S9045NBR1
Description FET RF 68V 880MHZ TO-270-2 FET RF 68V 880MHZ TO-272-2 FET RF 68V 880MHZ TO-270-2 FET RF 68V 880MHZ TO-272-2
Is it Rohs certified? conform to incompatible conform to conform to
Maker NXP NXP NXP NXP
Parts packaging code TO-270 TO-272 TO-270 TO-272
package instruction FLATPACK, R-PDFP-F2 FLANGE MOUNT, R-PDFM-F2 FLATPACK, R-PDFP-F2 FLANGE MOUNT, R-PDFM-F2
Contacts 2 2 2 3
Manufacturer packaging code CASE 1265-08 CASE PLASTIC CASE PLASTIC CASE 1337-03
Reach Compliance Code not_compliant not_compliant not_compliant not_compliant
ECCN code EAR99 EAR99 EAR99 EAR99
Shell connection SOURCE SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 68 V 68 V 68 V 68 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JEDEC-95 code TO-270 TO-272 TO-270 TO-272
JESD-30 code R-PDFP-F2 R-PDFM-F2 R-PDFP-F2 R-PDFM-F2
Humidity sensitivity level 3 3 3 3
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLATPACK FLANGE MOUNT FLATPACK FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum power dissipation(Abs) 175 W 175 W 175 W 175 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form FLAT FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
JESD-609 code e3 e0 - e3
Terminal surface Matte Tin (Sn) Tin/Lead (Sn/Pb) - Matte Tin (Sn)
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