Freescale Semiconductor
Technical Data
MRFG35030R5
Rev. 2, 3/2005
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL base station applications with frequencies from 3400 to
3600 MHz. Suitable for TDMA and CDMA amplifier applications. To be used in
Class AB applications.
•
Typical
Single−Carrier W−CDMA Performance: V
DD
=
12
Volts, I
DQ
=
650 mA, P
out
= 3 Watts Avg., f = 3550 MHz, Channel Bandwidth =
3.84 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Power Gain —12 dB
Drain Efficiency — 21%
ACPR @ 5 MHz Offset —
−41
dBc @ 3.84 MHz Channel Bandwidth
•
Internally Matched, Controlled Q, for Ease of Use
•
High Gain, High Efficiency and High Linearity
•
Excellent Thermal Stability
•
In Tape and Reel. R5 Suffix = 50 Units per 56 mm, 13 inch Reel.
MRFG35030R5
3550 MHz, 30 W, 12 V
SINGLE W−CDMA
POWER FET
GaAs PHEMT
CASE 1490−02, STYLE 1
Table 1. Maximum Ratings
Rating
Drain−Source Voltage
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Gate−Source Voltage
RF Input Power
Storage Temperature Range
Channel Temperature
(1)
Operating Case Temperature Range
Symbol
V
DSS
P
D
V
GS
P
in
T
stg
T
ch
T
C
Symbol
R
θJC
Value
15
79
0.53
−
5
37
−
40 to +175
175
−
20 to +90
Unit
Vdc
W
W/°C
Vdc
dBm
°C
°C
°C
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
1. For reliable operation, the operating channel temperature should not exceed 150°C.
Value
1.9
Unit
°C/W
©
Freescale Semiconductor, Inc., 2005. All rights reserved.
MRFG35030R5
1
RF Device Data
Freescale Semiconductor
Table 3. Electrical Characteristics
(T
C
= 25°C unless otherwise noted)
Characteristic
DC Characteristics
Off State Drain Current
(V
DS
= 3.5 Vdc, V
GS
=
−2
Vdc)
Off State Current
(V
DS
= 28.5 Vdc, V
GS
=
−2.5
Vdc)
Gate−Source Cut−off Voltage
(V
DS
= 3.5 Vdc, I
DS
= 1 mA/mm)
I
DSO
I
DSX
V
GS(th)
—
—
−0.7
15
5
−0.85
425
42.5
−1.1
µAdc
mAdc
Vdc
Symbol
Min
Typ
Max
Unit
Functional Tests
(In Freescale Test Fixture, 50 ohm system)
(1)
V
DD
= 12 Vdc, I
DQ
= 650 mA, P
out
= 3 W Avg., f = 3550 MHz,
Single−carrier W−CDMA, 3.84 MHz Channel Bandwidth Carrier. ACPR measured in 3.84 MHz Channel Bandwidth @
±5
MHz Offset.
Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain
Drain Efficiency
Adjacent Channel Power Ratio
Output Power, 1 dB Compression Point, CW
1. Measurements made with device in test fixture.
G
ps
η
D
ACPR
P1dB
10
17
—
—
12
21
−41
30
—
—
−36
—
dB
%
dBc
W
Typical RF Performance
(In Freescale Test Fixture, 50
οhm
system) V
DD
= 12 Vdc, I
DQ
= 650 mA, f = 3550 MHz
MRFG35030R5
2
RF Device Data
Freescale Semiconductor
V
BIAS
V
SUPPLY
+
C10
+
C9
C8
C7
C6
C5
C4
C3
R1
C16
C15
C14
C13
C12
C11
C2
C17
Z5
RF
INPUT
Z6
Z1
C1
Z2
Z3
Z4
Z7
C19
Z8
C18
Z9
RF
OUTPUT
C20
Z1
Z2
Z3
Z4
Z5, Z6
0.065″ x 0.500″ Microstrip
0.065″ x 0.185″ Microstrip
0.115″ x 0.350″ Microstrip
0.065″ x 0.215″ Microstrip
0.020″ x 0.527″ Microstrip
Z7
Z8
Z9
PCB
0.085″ x 0.205″ Microstrip
0.065″ x 0.230″ Microstrip
0.065″ x 0.814″ Microstrip
Rogers RO4350, 0.030″,
ε
r
= 3.5
Figure 1. MRFG35030 Test Circuit Schematic
Table 4.
MRFG35030
Test Circuit Component Designations and Values
Part
C1, C2, C17
C3, C16
C4, C15
C5, C14
C6, C13
C7, C12
C8, C11
C9, C10
C18
C19
C20
R1
Description
6.8 pF Chip Capacitors
10 pF Chip Capacitors
100 pF Chip Capacitors
100 pF Chip Capacitors
1000 pF Chip Capacitors
0.1
µF
Chip Capacitors
39K Chip Capacitors
22
µF,
35 V Tantalum Capacitors
1.0 pF Chip Capacitor
0.7 pF Chip Capacitor
0.3 pF Chip Capacitor
10
W,
1/4 W, 1% Resistor
Part Number
100A6R8CP500X
100A100JP500X
100A101JP500X
100B101JP500X
100B102JP500X
CDR33BX104AKWS
200B393KP50X
T491X226K035AS
08051J1R0BBT
08051J0R7BBT
08051J0R3BBT
D55342M07B10J0R
Manufacturer
ATC
ATC
ATC
ATC
ATC
Newark
ATC
ATC
AVX
AVX
AVX
Dale
MRFG35030R5
RF Device Data
Freescale Semiconductor
3
V
GG
V
DD
C8
C9
C7
C6
C5
C4
C3
C11
C12
C13
C14
C15
C16
C10
R1
C2
C17
C19
C1
CUT OUT AREA
C18
C20
MRFG35030
Rev 01
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 2. MRFG35030 Test Circuit Component Layout
MRFG35030R5
4
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
16
14
G ps , POWER GAIN (dB)
12
G
ps
10
8
6
η
D
20
25
30
35
40
45
P
out
, OUTPUT POWER (dBm)
20
10
0
V
DD
= 12 Vdc, I
DQ
= 650 mA, f = 3550 MHz
Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
50
40
30
Figure 3. Single−Carrier W−CDMA Power Gain
and Drain Efficiency versus Output Power
ACPR, ADJACENT CHANNEL POWER RATIO (dBc)
-10
-20
-30
-40
-50
-60
-5
-10
-15
IRL
ACPR
-20
-25
20
25
30
35
40
45
P
out
, OUTPUT POWER (dBm)
Figure 4. Single−Carrier W−CDMA Adjacent
Channel Power Ratio and Input Return Loss
versus Output Power
100
10
PROBABILITY (%)
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
PEAK-TO-AVERAGE (dB)
(dB)
3.6
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-96.4
IRL, INPUT RETURN LOSS (dB)
3.84 MHz
Channel BW
V
DD
= 12 Vdc, I
DQ
= 650 mA, f = 3550 MHz
Single-Carrier W-CDMA
3.84 MHz Channel Bandwidth
Peak/Avg. = 8.5 dB @ 0.01% Probability (CCDF)
0
-ACPR @
3.84 MHz BW
η
D , DRAIN EFFICIENCY (%)
+ACPR @
3.84 MHz BW
Center 3.55 GHz
2 MHz
f, FREQUENCY (MHz)
Span 20 MHz
Figure 5. CCDF W−CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single−Carrier Test Signal
Figure 6. Single-Carrier W-CDMA Spectrum
MRFG35030R5
RF Device Data
Freescale Semiconductor
5
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