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DB5S309K0R

Description
DIODE SCHOTKY 30V 100MA SOT665
CategoryDiscrete semiconductor    diode   
File Size490KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
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DB5S309K0R Overview

DIODE SCHOTKY 30V 100MA SOT665

DB5S309K0R Parametric

Parameter NameAttribute value
package instructionR-PDSO-F5
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeMIXER DIODE
Maximum forward voltage (VF)0.44 V
frequency bandVERY HIGH FREQUENCY
JESD-30 codeR-PDSO-F5
Number of components2
Number of terminals5
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage30 V
Maximum reverse current2 µA
Reverse test voltage30 V
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
DB5S309K
Silicon epitaxial planar type
For high speed switching circuits
DB2S309 in SSMini5 type package
Features
Short reverse recovery time t
rr
Small reverse current I
R
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: 3B
Basic Part Number
Dual DB2S309 (Parallel)
Packaging
DB5S309K0R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard)
1: Anode-1
2: N.C.
3: Anode-2
Panasonic
JEITA
Code
5
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Reverse voltage
Repetitive peak reverse voltage
Forward current (Average)
Peak forward current
Non-repetitive peak forward surge current
*1
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
R
V
RRM
I
F(AV)
I
FM
I
FSM
T
j
T
opr
T
stg
Rating
30
30
100
200
1
125
–40 to +85
–55 to +125
Unit
V
V
mA
mA
A
°C
°C
°C
4: Cathode-2
5: Cathode-1
SSMini5-F4-B
SC-107BB
SOT-665
4
1
2
3
Note) *1: 50 Hz sine wave 1 cycle (Non-repetitive peak current)
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Forward voltage
Reverse current
Terminal capacitance
Reverse recovery time
*1
Symbol
V
F1
V
F2
I
R1
I
R2
C
t
t
rr
I
F
= 10 mA
I
F
= 100 mA
V
R
= 10 V
V
R
= 30 V
V
R
= 10 V, f = 1 MHz
I
F
= I
R
= 100 mA, I
rr
= 10 mA
,
R
L
= 100
3.0
1.3
Conditions
Min
Typ
Max
0.44
0.58
0.3
2.0
Unit
V
µA
pF
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage
of current from the operating equipment.
3. Absolute frequency of input and output is 250 MHz
4. *1: t
rr
measurement circuit
Bias Application Unit (N-50BU)
t
r
10%
Input Pulse
t
p
Output Pulse
t
I
F
t
rr
t
I
rr
= 10 mA
A
V
R
Wave Form Analyzer
(SAS-8130)
R
i
= 50
90%
t
p
= 2
µs
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Pulse Generator
(PG-10N)
R
s
= 50
Publication date: April 2013
Ver. DED
1

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