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SE30AFD-M3/6B

Description
DIODE GEN PURP 200V 1.4A DO221AC
Categorysemiconductor    Discrete semiconductor   
File Size115KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
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SE30AFD-M3/6B Overview

DIODE GEN PURP 200V 1.4A DO221AC

SE30AFD-M3/6B Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)200V
Current - average rectification (Io)1.4A(DC)
Voltage at different If - Forward (Vf1.1V @ 3A
speedStandard recovery >500ns, >200mA (Io)
Reverse recovery time (trr)1.5µs
Current at different Vr - Reverse leakage current10µA @ 200V
Capacitance at different Vr, F19pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-221AC, SMA flat lead
Supplier device packagingDO-221AC
Operating Temperature - Junction-55°C ~ 175°C
SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
eSMP®
Series
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage current
• ESD capability
Top View
Bottom View
SlimSMA
(DO-221AC)
Cathode
Anode
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
consumer and automotive applications.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 3.0 A (T
A
= 125 °C)
I
R
T
J
max.
Package
Circuit configuration
3.0 A
100 V, 200 V, 400 V, 600 V
40 A
0.86 V
10 μA
175 °C
SlimSMA (DO-221AC)
Single
Case:
SlimSMA (DO-221AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
Mounted on 15 mm x 15 mm pad areas, 2 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
SYMBOL
V
RRM
I
F (1)
I
F (2)
I
FSM
T
J
, T
STG
SE30AFB
S3B
100
SE30AFD
S3D
200
3.0
1.4
40
-55 to +175
SE30AFG
S3G
400
SE30AFJ
S3J
600
UNIT
V
A
A
°C
Revision: 08-May-2018
Document Number: 89955
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000

SE30AFD-M3/6B Related Products

SE30AFD-M3/6B SE30AFB-M3/6A SE30AFJ-M3/6B SE30AFG-M3-6B SE30AFB-M3/6B SE30AFG-M3/6B
Description DIODE GEN PURP 200V 1.4A DO221AC Rectifiers 3 Amp 100 Volts ESD PROTECTION Rectifiers 3.0A, 600V, ESD PROTECTION, SLIM SMA Rectifiers 3.0A, 400V, ESD PROTECTION, SLIM SMA DIODE GEN PURP 100V 1.4A DO221AC DIODE GEN PURP 400V 1.4A DO221AC
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