SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com
Vishay General Semiconductor
Surface Mount ESD Capability Rectifiers
FEATURES
eSMP®
Series
• Very low profile - typical height of 0.95 mm
• Ideal for automated placement
• Oxide planar chip junction
• Low forward voltage drop, low leakage current
• ESD capability
Top View
Bottom View
SlimSMA
(DO-221AC)
Cathode
Anode
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 260 °C
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESIGN SUPPORT TOOLS
Models
Available
click logo to get started
TYPICAL APPLICATIONS
General purpose, power line polarity protection, in both
consumer and automotive applications.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 3.0 A (T
A
= 125 °C)
I
R
T
J
max.
Package
Circuit configuration
3.0 A
100 V, 200 V, 400 V, 600 V
40 A
0.86 V
10 μA
175 °C
SlimSMA (DO-221AC)
Single
Case:
SlimSMA (DO-221AC)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 2 whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity:
color band denotes the cathode end
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Device marking code
Maximum repetitive peak reverse voltage
Maximum DC forward current
Peak forward surge current 10 ms single half
sine-wave superimposed on rated load
Operating junction and storage temperature range
Notes
(1)
Mounted on 15 mm x 15 mm pad areas, 2 oz. FR4 PCB
(2)
Free air, mounted on recommended copper pad area
SYMBOL
V
RRM
I
F (1)
I
F (2)
I
FSM
T
J
, T
STG
SE30AFB
S3B
100
SE30AFD
S3D
200
3.0
1.4
40
-55 to +175
SE30AFG
S3G
400
SE30AFJ
S3J
600
UNIT
V
A
A
°C
Revision: 08-May-2018
Document Number: 89955
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com
Vishay General Semiconductor
TEST CONDITIONS
SYMBOL
TYP.
0.91
0.97
0.79
0.86
-
13
1.5
19
MAX.
-
1.1
-
0.98
10
100
-
-
UNIT
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
I
F
= 1.5 A
I
F
= 3.0 A
I
F
= 1.5 A
I
F
= 3.0 A
Rated V
R
T
A
= 25 °C
V
F (1)
T
A
= 125 °C
I
R (2)
t
rr
C
J
Instantaneous forward voltage
V
Reverse current
Typical reverse recovery time
Typical junction capacitance
T
A
= 25 °C
T
A
= 125 °C
I
F
= 0.5 A, I
R
= 1.0 A, I
rr
= 0.25 A
4.0 V, 1 MHz
μA
μs
pF
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width
40 ms
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
SYMBOL
R
JA
(1)
R
JM
(2)
SE30AFB
SE30AFD
12
SE30AFG
SE30AFJ
UNIT
°C/W
125
Notes
(1)
Free air, mounted on recommended PCB, 1 oz. pad area; thermal resistance R
JA
- junction to ambient
(2)
Mounted on 15 mm x 15 mm pad areas, 2 oz. FR4 PCB; R
- junction to mount
JM
IMMUNITY TO ELECTRICAL STATIC DISCHARGE TO THE FOLLOWING STANDARDS
(T
A
= 25 °C unless otherwise noted)
STANDARD
AEC-Q101-001
TEST TYPE
Human body model (contact mode)
TEST CONDITIONS
C = 100 pF, R = 1.5 k
SYMBOL
V
C
CLASS
H3B
VALUE
> 8 kV
ORDERING INFORMATION
(Example)
PREFERRED P/N
SE30AFJ-M3/6A
SE30AFJ-M3/6B
SE30AFJHM3/6A
(1)
SE30AFJHM3/6B
(1)
(1)
UNIT WEIGHT (g)
0.032
0.032
0.032
0.032
PREFERRED PACKAGE CODE
6A
6B
6A
6B
BASE QUANTITY
3500
14 000
3500
14 000
DELIVERY MODE
7" diameter plastic tape and reel
13" diameter plastic tape and reel
7" diameter plastic tape and reel
13" diameter plastic tape and reel
Note
AEC-Q101 qualified
Revision: 08-May-2018
Document Number: 89955
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25
C
unless otherwise noted)
Instantaneous Reverse Current (μA)
3.6
3.2
2.8
2.4
2
1.6
1.2
0.8
0.4
0
0
T
M
measured at cathode band
terminal PCB mount
25
50
75
100
125
150
175
T
A
= 25 °C
T
M
= 141 °C, R
thM
= 12 °C/W
1000
100
10
1
T
A
= 75 °C
0.1
0.01
0.001
10
20
30
40
50
60
70
80
90
100
T
A
= 25 °C
DC Forward Rectified Current (A)
T
A
= 175 °C
T
A
= 150 °C
T
A
= 125 °C
Mount Temperature (°C)
Fig. 1 - Maximum Forward Current Derating Curve
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Leakage Characteristics
3.5
D = 0.8
100
Average Power Loss (W)
D = 0.3
2.5
2.0
1.5
1.0
0.5
0.0
0
0.5
1
1.5
2
2.5
3
3.5
D = t
p
/T
T
D = 0.2
D = 0.1
D = 1.0
Junction Capacitance (pF)
3.0
D = 0.5
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
10
t
p
1
0.1
1
10
100
Average Forward Current (A)
Fig. 2 - Forward Power Loss Characteristics
Reverse Voltage (V)
Fig. 5 - Typical Junction Capacitance
Instantaneous Forward Current (A)
Transient Thermal Impedance (°C/W)
100
1000
Junction to Ambient
10
T
A
= 175 °C
T
A
= 125 °C
T
A
= 150 °C
T
A
= 75 °C
T
A
= 25 °C
100
1
10
0.1
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1
0.01
0.1
1
10
100
Instantaneous Forward Voltage (V)
Fig. 3 - Typical Instantaneous Forward Characteristics
t - Pulse Duration (s)
Fig. 6 - Typical Junction Capacitance
Revision: 08-May-2018
Document Number: 89955
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SE30AFB, SE30AFD, SE30AFG, SE30AFJ
www.vishay.com
Vishay General Semiconductor
140
Thermal Resistance (°C/W)
120
100
80
60
40
20
0
0.0
2.0
4.0
6.0
Epoxy printed
circiut board FR4
copper
thickness = 70 μm
Scu
(cm2)
8.0
10.0
Copper Pad Areas (cm
2
)
Fig. 7 - Thermal Resistance Junction to Ambient vs. Copper Pad Areas
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
SlimSMA
(DO-221AC)
Cathode Band
0.106 (2.70)
0.098 (2.50)
0.057 (1.45)
0.049 (1.25)
0.171 (4.35)
0.163 (4.15)
0.211 (5.35)
0.199 (5.05)
0.039 (1.00)
0.035 (0.90)
0.012 (0.30)
0.006 (0.15)
0.047 (1.20)
0.030 (0.75)
Typ.: 0.019 (0.48)
Mounting Pad Layout
0.060 (1.52)
MIN.
0.047 (1.20)
MIN.
0.123 (3.12) MAX.
0.217 (5.52) REF.
0.047 (1.20)
MIN.
Revision: 08-May-2018
Document Number: 89955
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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www.vishay.com
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Disclaimer
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Revision: 08-Feb-17
1
Document Number: 91000