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SF1003G C0G

Description
DIODE GEN PURP 150V 10A TO220AB
Categorysemiconductor    Discrete semiconductor   
File Size376KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SF1003G C0G Overview

DIODE GEN PURP 150V 10A TO220AB

SF1003G C0G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)150V
Current - average rectification (Io)10A
Voltage at different If - Forward (Vf975mV @ 5A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current10µA @ 150V
Capacitance at different Vr, F70pF @ 4V,1MHz
Installation typeThrough hole
Package/casingTO-220-3
Supplier device packagingTO-220AB
Operating Temperature - Junction-55°C ~ 150°C
SF1001G - SF1008G
Taiwan Semiconductor
CREAT BY ART
10A, 50V - 600V Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF
- High current capavility
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
TO-220AB
MECHANICAL DATA
Case:
TO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
5 in-lbs maximum
Weight:
1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@5A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C.
(Note 1)
T
J
=25°C
T
J
=100°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
70
3.5
- 55 to +150
- 55 to +150
0.975
10
400
35
50
SF10
01G
50
35
50
SF10
02G
100
70
100
SF10
03G
150
105
150
SF10
04G
200
140
200
10
125
1.3
1.7
SF10
05G
300
210
300
SF10
06G
400
280
400
SF10
07G
500
350
500
SF10
08G
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
Document Number: DS_D1411015
Version: J15

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