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SFF502G C0G

Description
DIODE GEN PURP 100V 5A ITO220AB
Categorysemiconductor    Discrete semiconductor   
File Size389KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SFF502G C0G Overview

DIODE GEN PURP 100V 5A ITO220AB

SFF502G C0G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)5A
Voltage at different If - Forward (Vf980mV @ 2.5A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current10µA @ 100V
Capacitance at different Vr, F70pF @ 4V,1MHz
Installation typeThrough hole
Package/casingTO-220-3 fully encapsulated, isolation tab
Supplier device packagingITO-220AB
Operating Temperature - Junction-55°C ~ 150°C
SFF501G - SFF508G
Taiwan Semiconductor
CREAT BY ART
5A, 50V - 600V Isolated Glass Passivated Super Fast Rectifiers
FEATURES
- High efficiency, low VF
- High current capability
- High surge current capability
- Low power loss
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
ITO-220AB
MECHANICAL DATA
Case:
ITO-220AB
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
As marked
Mounting torque:
0.56 Nm max.
Weight:
1.82 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage
@ 2.5 A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical junction capacitance (Note 3)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
Note 2: Test conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
(Note 1)
T
J
=25°C
T
J
=100°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJC
T
J
T
STG
70
5.5
- 55 to +150
- 55 to +150
0.98
10
400
35
50
SFF
50
35
50
SFF
100
70
100
SFF
150
105
150
SFF
200
140
200
5
70
1.3
1.7
SFF
300
210
300
SFF
400
280
400
SFF
500
350
500
SFF
600
420
600
501G 502G 503G 504G 505G 506G 507G 508G
UNIT
V
V
V
A
A
V
μA
ns
pF
°C/W
°C
°C
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