DMN2004DWKQ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V
(BR)DSS
20V
R
DS(ON) max
0.55Ω @ V
GS
= 4.5V
I
D
T
A
= +25°
C
540mA
Features
Dual N-Channel MOSFET
Low On-Resistance
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
NEW PRODUCT
Description
This MOSFET is designed to minimize the on-state resistance
(R
DS(ON)
) and yet maintain superior switching performance, making
it ideal for high-efficiency power management applications.
Applications
Load Switch
Mechanical Data
Case: SOT363
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish - Matte Tin Annealed over Alloy 42
Leadframe. Solderable per MIL-STD-202, Method 208
e3
Weight: 0.006 grams (Approximate)
SOT363
D
2
G
1
S
1
ESD PROTECTED TO 2kV
S
2
G
2
D
1
Top View
Top View
Internal Schematic
Ordering Information
(Note 5)
Part Number
DMN2004DWKQ-7
Notes:
Case
SOT363
Packaging
3,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
NAB = Product Type Marking Code
YM = Date Code Marking
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
NAB YM
NAB YM
Date Code Key
Year
2006
Code
T
Month
Code
Jan
1
2007
U
Feb
2
….
….
Mar
3
2013
A
Apr
4
2014
B
May
5
2015
C
Jun
6
2016
D
Jul
7
2017
E
Aug
8
2018
F
Sep
9
2019
G
Oct
O
2020
H
Nov
N
2021
I
Dec
D
DMN2004DWKQ
Document number: DS38630 Rev. 1 - 2
1 of 6
www.diodes.com
February 2016
© Diodes Incorporated
DMN2004DWKQ
Maximum Ratings
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 6)
Steady
State
T
A
= +25°
C
T
A
= +85°
C
Symbol
V
DSS
V
GSS
I
D
I
DM
Value
20
±8
540
390
1.5
Unit
V
V
mA
A
NEW PRODUCT
Pulsed Drain Current (Note 7)
Thermal Characteristics
(@T
A
= +25° unless otherwise specified.)
C,
Characteristic
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P
D
R
JA
T
J,
T
STG
Value
200
625
-65 to +150
Unit
mW
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 8)
(@T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
fs
|
V
SD
C
iss
C
oss
C
rss
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
Min
20
-
-
0.5
-
200
0.5
-
-
-
-
-
-
-
-
-
-
-
Typ
-
-
-
-
0.4
0.5
0.7
-
-
36
5.7
4.2
0.53
0.95
0.08
0.07
4.1
7.3
13.8
10.5
Max
-
1
1
1.0
0.55
0.70
0.9
-
1.4
150
25
20
-
-
-
-
-
-
-
-
ns
ns
ns
ns
V
DD
= 10V, R
L
= 47Ω,
V
GEN
= 4.5V, R
GEN
= 10Ω
nC
V
DS
= 10V, I
D
= 250mA
Unit
V
µA
µA
V
Ω
mS
V
pF
pF
pF
V
DS
= 16V, V
GS
= 0V
f = 1.0MHz
Test Condition
V
GS
= 0V, I
D
= 10µA
V
DS
= 16V, V
GS
= 0V
V
GS
=
4.5V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= 250µA
V
GS
= 4.5V, I
D
= 540mA
V
GS
= 2.5V, I
D
= 500mA
V
GS
= 1.8V, I
D
= 350mA
V
DS
= 10V, I
D
= 0.2A
V
GS
= 0V, I
S
= 115mA
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge (V
GS
= 4.5V)
Total Gate Charge (V
GS
= 8.0V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
6. Device mounted on FR-4 PCB.
7. Pulse width
10µS,
Duty Cycle
1%.
8. Short duration pulse test used to minimize self-heating effect.
DMN2004DWKQ
Document number: DS38630 Rev. 1 - 2
2 of 6
www.diodes.com
February 2016
© Diodes Incorporated
DMN2004DWKQ
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
0
0
1
2
3
4
5
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2
Reverse Drain Current vs. Source-Drain Voltage
1
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
T
ch
, CHANNEL TEMPERATURE
(°
)
(癈
C)
Fig. 3 Gate Threshold Voltage vs. Channel Temperature
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
R
DS(on)
, STATIC DRAIN-SOURCE
ON-RESISTANCE (
)
0.1
I
D,
DRAIN CURRENT (A)
Fig. 4 Static Drain-Source On-Resistance Vs. Drain Current
6
I
D
, DRAIN CURRENT (A)
Fig. 5 Static Drain-Source On-Resistance vs. Drain Current
DMN2004DWKQ
Document number: DS38630 Rev. 1 - 2
3 of 6
www.diodes.com
February 2016
© Diodes Incorporated
DMN2004DWKQ
NEW PRODUCT
I
D
, DRAIN CURRENT (A)
Fig. 7
On-Resistance vs. Drain Current and Gate Voltage
T
j
, JUNCTION TEMPERATURE ( °
C)
Fig. 8
Static Drain-Source, On-Resistance vs. Temperature
I
DSS
, DRAIN-SOURCE LEAKAGE CURRENT (nA)
I
DR
, REVERSE DRAIN CURRENT (A)
60
50
|Y
fs
|, FORWARD TRANSFER ADMITTANCE (S)
C
T
, JUNCTION CAPACITANCE (pF)
f=1MHz
40
C
iss
30
20
10
C
oss
0
1000
I
D
, DRAIN CURRENT (mA)
Fig. 11 Forward Transfer Admittance vs. Drain Current
C
rss
0
5
10
15
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12 Typical Junction Capacitance
20
DMN2004DWKQ
Document number: DS38630 Rev. 1 - 2
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www.diodes.com
February 2016
© Diodes Incorporated
DMN2004DWKQ
8
10
R
DS(on)
Limited
V
GS
GATE THRESHOLD VOLTAGE (V)
6
I
D
, DRAIN CURRENT (A)
V
DS
= 10V
I
D
= 250mA
1
DC
NEW PRODUCT
4
0.1
P
W
= 10s
P
W
= 1s
P
W
= 100ms
P
W
= 10ms
P
W
= 1ms
P
W
= 100µ
s
2
0.01
T
J(m ax)
= 150°
C
T
A
= 25°
C
0
0
0.1
0.2
0.3
0.4 0.5
0.6 0.7
0.8
0.9
1
Q
g
, TOTAL GATE CHARGE (nC)
Figure 13 Gate Charge
V
GS
= 4.5V
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 14 SOA, Safe Operation Area
100
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT363
E
E1
F
b
D
SOT363
Dim Min Max
Typ
A1
0.00 0.10
0.05
A2
0.90 1.00
1.00
b
0.10 0.30
0.25
c
0.10 0.22
0.11
D
1.80 2.20
2.15
E
2.00 2.20
2.10
E1
1.15 1.35
1.30
e
0.650 BSC
F
0.40 0.45 0.425
L
0.25 0.40
0.30
a
8°
All Dimensions in mm
A2
c
A1
e
L
a
DMN2004DWKQ
Document number: DS38630 Rev. 1 - 2
5 of 6
www.diodes.com
February 2016
© Diodes Incorporated
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