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SR110 B0G

Description
DIODE SCHOTTKY 100V 1A DO204AL
Categorysemiconductor    Discrete semiconductor   
File Size198KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

SR110 B0G Overview

DIODE SCHOTTKY 100V 1A DO204AL

SR110 B0G Parametric

Parameter NameAttribute value
Diode typeSchottky
Voltage - DC Reverse (Vr) (Maximum)100V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf850mV @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current100µA @ 100V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingDO-204AL, DO-41, axial
Supplier device packagingDO-204AL(DO-41)
Operating Temperature - Junction-55°C ~ 150°C
SR102 thru SR115
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low forward voltage drop
- Low power loss, high efficiency
- Guardring for overvoltage protection
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Schottky Barrier Rectifier
MECHANICAL DATA
Case:
DO-204AL (DO-41)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Base P/N with prefix "H" on packing code - AEC-Q101 qualified
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test,
with prefix "H" on packing code meet JESD 201 class 2 whisker test
Weight:
0.33g (approximately)
DO-204AL (DO-41)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25℃ unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@1A
Maximum reverse current @ rated VR
T
J
=25
T
J
=100℃
T
J
=125
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
0.55
0.5
I
R
dV/dt
R
θJA
T
J
T
STG
- 55 to +125
- 55 to +150
10
-
5
-
10000
90
- 55 to +150
SR
102
20
14
20
SR
103
30
21
30
SR
104
40
28
40
SR
105
50
35
50
1
30
0.70
0.85
0.1
-
2
V/μs
O
SR
106
60
42
60
SR
109
90
63
90
SR
110
100
70
100
SR
115
150
105
150
UNIT
V
V
V
A
A
0.95
V
mA
Voltage rate of change (Rated V
R
)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
C/W
O
O
C
C
Document Number: D1308011
Version: F13
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