This product complies with the RoHS Directive (EU 2002/95/EC).
Power Transistors
2SC1568
Silicon NPN epitaxial planar type
For low-voltage type medium output power amplification
Complementary to 2SA0900
φ
3.16
±0.1
8.0
+0.5
–0.1
Unit: mm
3.2
±0.2
M
Di ain
sc te
on na
tin nc
ue e/
d
3.8
±0.3
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
h
FE2
V
EBO
Collector-base voltage (Emitter open)
sc
on
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
e/
Di
Collector-base cutoff current (Emitter open)
Collector-emitter cutoff current (Base open)
Forward current transfer ratio
Collector-emitter saturation voltage
M
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
h
FE1
Q
90 to 155
R
130 to 210
S
180 to 280
Publication date: January 2003
tin
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1.9
±0.1
0.75
±0.1
Rating
18
18
5
1
2
Unit
V
V
V
A
A
0.5
±0.1
16.0
±1.0
•
Low collector-emitter saturation voltage V
CE(sat)
•
Satisfactory operation performances and high efficiency with a low-
voltage power supply
•
TO-126B package which incorporates a unique construction en-
abling installation to the heat sink without using insulation parts
4.6
±0.2
0.5
±0.1
1.76
±0.1
2.3
±0.2
1
2
3
1: Emitter
2: Collector
3: Base
TO-126B-A1 Package
1.2
W
150
°C
T
stg
−55
to
+150
°C
Conditions
Min
18
Typ
Max
I
C
=
10
µA,
I
E
=
0
I
C
=
1 mA, I
B
=
0
I
E
=
10
µA,
I
C
=
0
3.05
±0.1
■
Features
11.0
±0.5
Unit
V
18
5
V
V
V
CB
=
10 V, I
E
=
0
V
CE
=
18 V, I
B
=
0
1
µA
µA
V
10
na
nc
h
FE1 *
V
CE
=
2 V, I
C
=
500 mA
V
CE
=
2 V, I
C
=
1.5 A
I
C
=
1 A, I
B
=
50 mA
90
50
280
ain
te
100
V
CE(sat)
V
BE(sat)
f
T
C
ob
0.5
I
C
=
500 mA, I
B
=
50 mA
1.2
V
V
CB
=
6 V, I
E
= −50
mA, f
=
200 MHz
V
CB
=
6 V, I
E
=
0, f
=
1 MHz
150
12
MHz
pF
SJD00093BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC1568
P
C
T
a
6
1.2
(1)With a 100×100×2mm
Al heat sink
(2)Without heat sink
Class B push pull
T
C
=25˚C
I
C
V
CE
1.2
I
C
I
B
V
CE
=2V
T
C
=25˚C
Collector power dissipation P
C
(W)
5
1.0
I
B
=5.0mA
4.5mA
4.0mA
1.0
4
(1)
Collector current I
C
(A)
Collector current I
C
(A)
0.8
0.8
0
0
40
80
120
160
200
Ambient temperature T
a
(
°C
)
V
CE(sat)
I
C
10
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/I
B
=20
1
T
C
=100˚C
0.1
25˚C
–25˚C
0.01
0.01
0.1
1
Collector current I
C
(A)
f
T
I
E
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
200
na
nc
Transition frequency f
T
(MHz)
V
CB
=6V
f=200MHz
T
C
=25˚C
150
100
50
0
−1
−10
−100
Emitter current I
E
(mA)
2
tin
ue
Pl
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ico L d d e
e
ro
ab ty ty
n.
du
pa ou pe pe
ct
d
na t l
life
so ate
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nic st
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.co inf
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.
n.
0.5mA
M
Di ain
sc te
on na
tin nc
ue e/
d
3
0.6
3.5mA
0.6
3.0mA
2
0.4
2.5mA
2.0mA
1.5mA
0.4
1
(2)
0.2
1.0mA
0.2
0
0
0.4
0.8
1.2
1.6
2.0
0
0
2
4
6
8
10
12
Collector-emitter voltage V
CE
(V)
Base current I
B
(mA)
V
BE(sat)
I
C
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
I
C
/I
B
=10
V
CE
=2V
10
1000
Forward current transfer ratio h
FE
T
C
=100˚C
–25˚C
1
T
C
=100˚C
–25˚C
100
25˚C
25˚C
0.1
10
0.01
0.01
0.1
1
1
0.01
0.1
1
Collector current I
C
(A)
Collector current I
C
(A)
sc
on
C
ob
V
CB
I
CBO
T
a
Di
50
10
4
I
E
=0
f=1MHz
T
C
=25˚C
V
CB
=10V
e/
40
10
3
te
30
I
CBO
(T
a
)
I
CBO
(T
a
=
25°C)
ain
M
10
2
20
10
10
0
1
10
100
1
0
40
80
120
160
Collector-base voltage V
CB
(V)
Ambient temperature T
a
(
°C
)
SJD00093BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
tin
ue
Pl
pla d in
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se g U tin tin t e fou
m R ue ue yp typ r P
ico L d d e
e
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n. ab typ ty
du
pa ou e pe
ct
d
na t l
life
so ate
cy
nic st
cle
.co inf
sta
.jp orm
ge
/e a
n/ tio
.
n.
M
ain
te
na
nc
M
Di ain
sc te
on na
tin nc
ue e/
d
e/
Di
sc
on
PCB Design
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