52 standard frequencies between 3.57 MHz and 77.76 MHz
100% pin-to-pin drop-in replacement to quartz-based XO
Excellent total frequency stability as low as ±20 ppm
Operating temperature from -40°C to 85°C. For 125°C and/or
-55°C options, refer to
SiT1618, SiT8918, SiT8920
Low power consumption of 3.5 mA typical at 1.8V
Standby mode for longer battery life
Fast startup time of 5 ms
LVCMOS/HCMOS compatible output
Industry-standard packages: 2.0 x 1.6, 2.5 x 2.0, 3.2 x 2.5,
5.0 x 3.2, 7.0 x 5.0 mm x mm
Instant samples with
Time Machine II
and
Field Programmable
Oscillators
Ideal for DSC, DVC, DVR, IP CAM, Tablets, e-Books,
SSD, GPON, EPON, etc
Ideal for high-speed serial protocols such as: USB,
SATA, SAS, Firewire, 100M / 1G / 10G Ethernet, etc.
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
For AEC-Q100 oscillators, refer to
SiT8924
and
SiT8925
Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise
stated. Typical values are at 25°C and nominal supply voltage.
Table 1. Electrical Characteristics
Parameters
Output Frequency Range
Symbol
f
Min.
Typ.
Max.
Unit
Condition
Refer to
Table 13
for the exact list of supported frequencies
Frequency Range
52 standard frequencies between
MHz
3.57 MHz and 77.76 MHz
-20
-25
-50
-20
-40
1.62
2.25
2.52
2.7
2.97
2.25
–
–
–
–
–
–
–
–
45
–
–
–
90%
Frequency Stability
F_stab
Frequency Stability and Aging
–
+20
ppm
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C,
and variations over operating temperature, rated power
–
+25
ppm
supply voltage and load.
–
+50
ppm
Operating Temperature Range
–
+70
°C
Extended Commercial
–
+85
°C
Industrial
Supply Voltage and Current Consumption
1.8
1.98
V
Contact
SiTime
for 1.5V support
2.5
2.75
V
2.8
3.08
V
3.0
3.3
V
3.3
3.63
V
–
3.63
V
3.8
4.5
mA
No load condition, f = 20 MHz, Vdd = 2.8V to 3.3V
3.7
4.2
mA
No load condition, f = 20 MHz, Vdd = 2.5V
3.5
4.1
mA
No load condition, f = 20 MHz, Vdd = 1.8V
–
4.2
mA
Vdd = 2.5V to 3.3V, OE = GND, Output in high-Z state
–
4.0
mA
Vdd = 1.8 V. OE = GND, Output in high-Z state
2.6
4.3
ST = GND, Vdd = 2.8V to 3.3V, Output is weakly pulled down
̅ ̅̅
A
1.4
2.5
ST = GND, Vdd = 2.5V, Output is weakly pulled down
̅ ̅̅
A
0.6
1.3
ST = GND, Vdd = 1.8V, Output is weakly pulled down
̅ ̅̅
A
LVCMOS Output Characteristics
–
1
1.3
–
–
55
2
2.5
2
–
%
ns
ns
ns
Vdd
All Vdds. See Duty Cycle definition in
Figure 3
and
Footnote 6
Vdd = 2.5V, 2.8V, 3.0V or 3.3V, 20% - 80%
Vdd =1.8V, 20% - 80%
Vdd = 2.25V - 3.63V, 20% - 80%
IOH = -4 mA (Vdd = 3.0V or 3.3V)
IOH = -3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOH = -2 mA (Vdd = 1.8V)
IOL = 4 mA (Vdd = 3.0V or 3.3V)
IOL = 3 mA (Vdd = 2.8V and Vdd = 2.5V)
IOL = 2 mA (Vdd = 1.8V)
Operating Temperature Range
T_use
Supply Voltage
Vdd
Current Consumption
Idd
OE Disable Current
Standby Current
I_OD
I_std
Duty Cycle
Rise/Fall Time
DC
Tr, Tf
Output High Voltage
VOH
Output Low Voltage
VOL
–
–
10%
Vdd
Rev 1.04
January 30, 2018
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Table 1. Electrical Characteristics (continued)
Parameters
Symbol
Min.
Typ.
–
–
87
–
–
–
–
1.8
1.8
12
14
0.5
1.3
Max.
–
30%
150
–
Unit
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE or ST
̅ ̅̅
Pin 1, OE logic high or logic low, or ST logic high
̅ ̅̅
Pin 1, ST logic low
̅ ̅̅
Condition
Input Characteristics
Input High Voltage
Input Low Voltage
Input Pull-up Impedance
VIH
VIL
Z_in
70%
–
50
2
Startup Time
Enable/Disable Time
Resume Time
RMS Period Jitter
Peak-to-peak Period Jitter
RMS Phase Jitter (random)
–
–
–
–
–
T_pk
T_phj
–
–
–
–
Vdd
Vdd
k
M
ms
ns
ms
ps
ps
ps
ps
ps
ps
Startup and Resume Timing
T_start
T_oe
T_resume
T_jitt
5
138
5
Jitter
3
3
25
30
0.9
2
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
f = 75 MHz, Vdd = 2.5V, 2.8V, 3.0V or 3.3V
f = 75 MHz, Vdd = 1.8V
f = 75 MHz, Integration bandwidth = 900 kHz to 7.5 MHz
f = 75 MHz, Integration bandwidth = 12 kHz to 20 MHz
Measured from the time Vdd reaches its rated minimum value
f = 77.76 MHz. For other frequencies, T_oe = 100 ns + 3 *
cycles
Measured from the time ST pin crosses 50% threshold
̅ ̅̅
Table 2. Pin Description
Pin
Symbol
[1]
Functionality
Output Enable
H : specified frequency output
L: output is high impedance. Only output driver is disabled.
H : specified frequency output
L: output is low (weak pull down). Device goes to sleep mode. Supply
current reduces to I_std.
Any voltage between 0 and Vdd or Open : Specified frequency
output. Pin 1 has no function.
Electrical ground
Oscillator output
Power supply voltage
[2]
[1]
[1]
Top View
OE/ST/NC
VDD
1
OE/ST /NC
̅ ̅̅
Standby
No Connect
2
3
4
GND
OUT
VDD
Power
Output
Power
GND
OUT
Figure 1. Pin Assignments
Notes:
1. In OE or ST mode, a pull-up resistor of 10 kΩ or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
̅ ̅̅
2. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Rev 1.04
Page 2 of 17
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Table 3. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance
of the IC is only guaranteed within the operational specifications, not at absolute maximum rat ings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free
soldering guidelines)
Junction Temperature
[3]
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Note:
3. Exceeding this temperature for extended period of time may damage the device.
Table 4. Thermal Consideration
[4]
Package
7050
5032
3225
2520
2016
Note:
4. Refer to JESD51 for
JA
and
JC
definitions, and reference layout used to determine the
JA
and
JC
values in the above table.
JA, 4 Layer Board
(°C/W)
142
97
109
117
152
JA, 2 Layer Board
(°C/W)
273
199
212
222
252
JC, Bottom
(°C/W)
30
24
27
26
36
Table 5. Maximum Operating Junction Temperature
[5]
Max Operating Temperature (ambient)
70°C
85°C
Maximum Operating Junction Temperature
80°C
95°C
Note:
5. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 6. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev 1.04
Page 3 of 17
www.sitime.com
SiT1602B
Low Power, Standard Frequency Oscillator
Test Circuit and Waveform
[6]
Vdd
Vout
Test Point
tr
80% Vdd
tf
4
Power
Supply
0.1 uF
1
3
2
15pF
(including probe
and fixture
capacitance)
50%
20% Vdd
High Pulse
(TH)
Period
Low Pulse
(TL)
Vdd
OE/ST Function
1 kΩ
Figure 2. Test Circuit
Note:
6. Duty Cycle is computed as Duty Cycle = TH/Period.
Figure 3. Waveform
Timing Diagrams
90% Vdd
Vdd
Vdd
50% Vdd
[7]
Pin 4 Voltage
T_start
No Glitch
during start up
ST Voltage
T_resume
CLK Output
HZ
T_start: Time to start from power-off
CLK Output
HZ
T_resume: Time to resume from ST
Figure 4. Startup Timing (OE/ ST̅ Mode)
̅ ̅
Figure 5. Standby Resume Timing ( ST̅ Mode Only)
̅ ̅
Vdd
50% Vdd
OE Voltage
T_oe
Vdd
OE Voltage
50% Vdd
T_oe
CLK Output
HZ
T_oe: Time to re-enable the clock output
CLK Output
HZ
T_oe: Time to put the output in High Z mode
Figure 6. OE Enable Timing (OE Mode Only)
Figure 7. OE Disable Timing (OE Mode Only)
Note:
7. SiT1602 has “no runt” pulses and “no glitch” output during startup or resume.
It is similar to a resistor with a switch, and the measured current signal is in the form of a square wave. How can we measure its fixed equivalent resistance, or how can we calculate it by calculatio...
[font=Tahoma, Helvetica, SimSun, sans-serif]The Flash Download Tools software for ESP8266 has been upgraded again. It supports ESP8266, ESP8285 (ESP8266 with built-in flash), and ESP32. [/font] [img=3...
There is a sentence in the Makefile of embedded U-boot: smdk2410_config: unconfig @$(MKCONFIG) $(@:_config=) arm arm920t smdk2410 NULL s3c24x0 The textbook explains that the result of $(@:_config=) is...
[flash]http://player.youku.com/player.php/sid/XMjg3NDI4NDAw/v.swf[/flash]The TPS40210 and TPS40211 are wide-input voltage (4.5 V to 52 V), non-synchronous boost controllers. They are suitable for topo...
I haven't posted on the forum for a long time, except for one time when I sold something. Today I posted again because I resigned. Hope everything goes well. [b][color=#5e7384]This content is original...
The core of a machine vision system is image acquisition and processing. All information comes from images, and image quality is crucial to the entire vision system. A good image can improve the st...[Details]
1. Project Overview
1.1 Introduction
Currently, most music files are saved in MP3 format, a lossy audio compression format that cannot perfectly reproduce the original music. With the exp...[Details]
Limited vocabulary recognition
According to the number of characters, words or short sentences in the vocabulary, it can be roughly divided into: less than 100 is small vocabulary; 100-1000 is...[Details]
1 Introduction
In the mid-1960s, American scientist Maas conducted extensive experimental research on the charging process of open-cell batteries and proposed an acceptable charging curve for ...[Details]
Compared to cloud databases, minicomputers are purpose-built for decentralized, rugged computing at the edge of the network. By moving applications, analytics, and processing services closer to the...[Details]
On August 22, the Wall Street Journal reported on the 21st local time that the new US government does not plan to acquire equity in semiconductor wafer foundry giant TSMC and Micron, one of the thr...[Details]
"We have successfully launched the first version of our dedicated chip for EMB brake-by-wire. Second-generation samples have also been successfully completed, and we are actively planning a third-g...[Details]
As the range of electric vehicles continues to increase, driving electric vehicles for long-distance travel has become a trend. For high-speed travel, how much impact will high-speed driving of ele...[Details]
For new energy vehicles, the importance of batteries is unquestionable. Not only does it determine the performance of the vehicle, but the battery density also has a great relationship with the veh...[Details]
Facial recognition, a biometric technology that uses facial features to authenticate identity, has rapidly become a global market hotspot in recent years as the technology has entered practical use...[Details]
On August 18th, China's largest expressway
charging station,
the G25 Changshen Expressway Tonglu Service Area (South Area), officially opened and launched its integrated solar-storage-charg...[Details]
Most cameras on the market use chips manufactured by Japanese companies like Sony, Sharp, Panasonic, and LG. South Korea now has the capability to produce chips, but the quality is somewhat inferio...[Details]
Renesas Electronics introduces a new USB-C power solution with an innovative three-level topology.
Improve performance while reducing system size
New solution combines excel...[Details]
Recently, UBTECH announced its patent for "robot self-battery replacement structure, device and method".
The Qichacha patent abstract shows that the robot's self-battery replacement stru...[Details]
Amid the rapid advancement of automotive intelligence, on-board storage has become a thorny bottleneck restricting the "large-scale popularization" of advanced assisted driving.
On the o...[Details]