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DBLS156GHC1G

Description
BRIDGE RECT 1P 800V 1.5A DBLS
CategoryDiscrete semiconductor    diode   
File Size195KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

DBLS156GHC1G Overview

BRIDGE RECT 1P 800V 1.5A DBLS

DBLS156GHC1G Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
package instructionR-PDSO-G4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PDSO-G4
Maximum non-repetitive peak forward current50 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage800 V
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
DBLS151G - DBLS159G
Taiwan Semiconductor
CREAT BY ART
1.5A, 50V - 1400V Glass Passivated Bridge Rectifiers
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DBLS
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 1.5 A
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJL
R
θJA
T
J
T
STG
1.1
2
500
15
40
- 55 to +150
- 55 to +150
DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS
151G 152G 153G 154G 155G 156G 157G 158G 159G
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
1.5
50
10.3
1.25
800
560
800
1000
700
1000
1200
840
1200
1400
980
1400
UNIT
V
V
V
A
A
A
2
s
V
μA
°C/W
°C
°C
Document Number: DS_D1310042
Version: L15

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