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D8320N06TVFXPSA1

Description
DIODE GEN PURP 600V 8320A
CategoryDiscrete semiconductor    diode   
File Size227KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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D8320N06TVFXPSA1 Overview

DIODE GEN PURP 600V 8320A

D8320N06TVFXPSA1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionO-CEDB-N2
Reach Compliance Codecompliant
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.94 V
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current95000 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-25 °C
Maximum output current8320 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage600 V
Maximum reverse current100000 µA
Reverse test voltage600 V
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
N
Netz-Gleichrichterdiode
Rectifier Diode
Datenblatt / Data sheet
D8320N
T
vj
= -25°C... T
vj max
V
RRM
Vorläufige Daten
preliminary data
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / maximum rated values
Periodische Spitzensperrspannung
Kenndaten
repetitive peak reverse voltages
Durchlaßstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Stoßstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Charakteristische Werte / Characteristic values
Durchlaßspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlaßkennlinie
2500 A
i
F
35000 A
on-state characteristic
Elektrische Eigenschaften
T
C
= 56 °C
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
400 V
600 V
13300 A
8320 A
103000 A
95000 A
53000 10³A²s
45000 10³A²s
I
FRMSM
I
FAVM
I
FSM
I²t
T
vj
= T
vj max
, i
F
= 10,0 kA
T
vj
= T
vj max
, i
F
= 4,0 kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
F
max.
max.
0,940 V
0,795 V
0,7 V
0,024 mΩ
V
(TO)
r
T
A=
B=
C=
D=
i
R
v
F
=
A
+
B
i
F
+
C
ln ( i
F
+
1 )
+
D
Sperrstrom
reverse current
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
i
F
T
vj
= T
vj max
, v
R
= V
RRM
8,869E-01
2,664E-06
-4,856E-02
4,741E-03
max.
100 mA
Thermische
Kühlfläche / cooling surface
Eigenschaften
beidseitig / two-sided,
θ
= 180°sin
beidseitig / two-sided, DC
Anode / anode,
θ
= 180°sin
Anode / anode, DC
Kathode / cathode,
θ
= 180°sin
Kathode / cathode, DC
Kühlfläche / cooling surface
beidseitig / two-sided
R
thJC
max.
max.
max.
max.
max.
max.
max.
0,0125
0,0117
0,0232
0,0225
0,0250
0,0245
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
R
thCH
T
vj max
T
c op
T
stg
0,003 °C/W
180 °C
-25...+150 °C
-25...+150 °C
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2008-04-10
1
IFBIP D AEC / 2008-04-09, H.Sandmann
A 15/08
Seite/page
1/8

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Description DIODE GEN PURP 600V 8320A Rectifier Diode, 1 Element, 8320A, 400V V(RRM), DIODE GEN PURP 200V 8320A DIODE GEN PURP 400V 8320A Rectifier Diode, Rectifier Diode,
Reach Compliance Code compliant compliant compliant compliant compliant compliant
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.94 V 0.795 V 0.94 V 0.94 V 0.94 V 0.94 V
Maximum non-repetitive peak forward current 95000 A 103000 A 95000 A 95000 A 95000 A 95000 A
Number of components 1 1 1 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Maximum output current 8320 A 8320 A 8320 A 8320 A 8320 A 8320 A
Base Number Matches 1 1 1 1 1 1
Is it Rohs certified? conform to conform to conform to conform to - -
package instruction O-CEDB-N2 - O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
application GENERAL PURPOSE - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Diode component materials SILICON - SILICON SILICON SILICON SILICON
JESD-30 code O-CEDB-N2 - O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Phase 1 - 1 1 1 1
Number of terminals 2 - 2 2 2 2
Minimum operating temperature -25 °C - -25 °C -25 °C -25 °C -25 °C
Package body material CERAMIC, METAL-SEALED COFIRED - CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND - ROUND ROUND ROUND ROUND
Package form DISK BUTTON - DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Maximum repetitive peak reverse voltage 600 V 400 V - 400 V 600 V 600 V
Maximum reverse current 100000 µA - 100000 µA 100000 µA 100000 µA 100000 µA
Reverse test voltage 600 V - - 400 V 600 V 600 V
surface mount YES - YES YES YES YES
Terminal form NO LEAD - NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END - END END END END
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