D8320N06TVF datasheet, PDF - EEWORLD Datasheet

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D8320N06TVF: DescriptionRectifier Diode,; CategoryDiscrete semiconductor diode; File Size227KB，8 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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D8320N06TVF Overview

Rectifier Diode,

D8320N06TVF Parametric

Parameter Name	Attribute value
package instruction	O-CEDB-N2
Reach Compliance Code	compliant
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.94 V
JESD-30 code	O-CEDB-N2
Maximum non-repetitive peak forward current	95000 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-25 °C
Maximum output current	8320 A
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Maximum repetitive peak reverse voltage	600 V
Maximum reverse current	100000 µA
Reverse test voltage	600 V
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Base Number Matches	1

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Netz-Gleichrichterdiode

Rectifier Diode

Datenblatt / Data sheet

D8320N

= -25°C... T

vj max

RRM

Vorläufige Daten

preliminary data

Elektrische Eigenschaften / Electrical properties

Höchstzulässige Werte / maximum rated values

Periodische Spitzensperrspannung

Kenndaten

repetitive peak reverse voltages

Durchlaßstrom-Grenzeffektivwert

maximum RMS on-state current

Dauergrenzstrom

average on-state current

Stoßstrom-Grenzwert

surge current

Grenzlastintegral

I²t-value

Charakteristische Werte / Characteristic values

Durchlaßspannung

on-state voltage

Schleusenspannung

threshold voltage

Ersatzwiderstand

slope resistance

Durchlaßkennlinie

2500 A

≤

35000 A

on-state characteristic

Elektrische Eigenschaften

= 56 °C

= 25 °C, t

= 10 ms

= T

vj max

= 10 ms

= 25 °C, t

= 10 ms

= T

vj max

, t

= 10 ms

400 V

600 V

13300 A

8320 A

103000 A

95000 A

53000 10³A²s

45000 10³A²s

FRMSM

FAVM

FSM

I²t

= T

vj max

, i

= 10,0 kA

= T

vj max

, i

= 4,0 kA

= T

vj max

= T

vj max

= T

vj max

max.

0,940 V

0,795 V

0,7 V

0,024 mΩ

(TO)

⋅

ln ( i

1 )

⋅

Sperrstrom

reverse current

Thermische Eigenschaften / Thermal properties

Innerer Wärmewiderstand

thermal resistance, junction to case

= T

vj max

, v

= V

RRM

8,869E-01

2,664E-06

-4,856E-02

4,741E-03

max.

100 mA

Thermische

Kühlfläche / cooling surface

Eigenschaften

beidseitig / two-sided,

= 180°sin

beidseitig / two-sided, DC

Anode / anode,

= 180°sin

Anode / anode, DC

Kathode / cathode,

= 180°sin

Kathode / cathode, DC

Kühlfläche / cooling surface

beidseitig / two-sided

thJC

max.

0,0125

0,0117

0,0232

0,0225

0,0250

0,0245

°C/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

Höchstzulässige Sperrschichttemperatur

maximum junction temperature

Betriebstemperatur

operating temperature

Lagertemperatur

storage temperature

thCH

vj max

c op

stg

0,003 °C/W

180 °C

-25...+150 °C

prepared by: H.Sandmann

approved by: M.Leifeld

date of publication:

revision:

2008-04-10

IFBIP D AEC / 2008-04-09, H.Sandmann

A 15/08

Seite/page

1/8

D8320N06TVF Related Products

	D8320N06TVF	D8320N4T	D8320N06TVFXPSA1	D8320N02TVFXPSA1	D8320N04TVFXPSA1	D8320N06TVFHOSA1
Description	Rectifier Diode,	Rectifier Diode, 1 Element, 8320A, 400V V(RRM),	DIODE GEN PURP 600V 8320A	DIODE GEN PURP 200V 8320A	DIODE GEN PURP 400V 8320A	Rectifier Diode,
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.94 V	0.795 V	0.94 V	0.94 V	0.94 V	0.94 V
Maximum non-repetitive peak forward current	95000 A	103000 A	95000 A	95000 A	95000 A	95000 A
Number of components	1	1	1	1	1	1
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Maximum output current	8320 A	8320 A	8320 A	8320 A	8320 A	8320 A
Base Number Matches	1	1	1	1	1	1
package instruction	O-CEDB-N2	-	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
application	GENERAL PURPOSE	-	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Diode component materials	SILICON	-	SILICON	SILICON	SILICON	SILICON
JESD-30 code	O-CEDB-N2	-	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Phase	1	-	1	1	1	1
Number of terminals	2	-	2	2	2	2
Minimum operating temperature	-25 °C	-	-25 °C	-25 °C	-25 °C	-25 °C
Package body material	CERAMIC, METAL-SEALED COFIRED	-	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	-	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	-	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Maximum repetitive peak reverse voltage	600 V	400 V	600 V	-	400 V	600 V
Maximum reverse current	100000 µA	-	100000 µA	100000 µA	100000 µA	100000 µA
Reverse test voltage	600 V	-	600 V	-	400 V	600 V
surface mount	YES	-	YES	YES	YES	YES
Terminal form	NO LEAD	-	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	-	END	END	END	END
Is it Rohs certified?	-	conform to	conform to	conform to	conform to	-

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