MBR30045CT(R)L
Low V
F
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Type 45 V V
RRM
• Not ESD Sensitive
Twin Tower Package
V
RRM
= 45 V
I
F(AV)
= 300 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBR30045CT(R)L Unit
45
32
45
-55 to 150
-55 to 150
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current (per pkg)
Peak forward surge current
(per leg)
Maximum instantaneous forward voltage (per
leg)
Maximum instantaneous reverse
current at rated DC blocking voltage
(per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 100 °C
t
p
= 8.3 ms, half sine
I
FM
= 150 A, Tj = 25 °C
T
j
= 25 °C
T
j
= 100 °C
MBR30045CT(R)L Unit
300
2000
0.60
5
250
A
A
V
mA
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg)
R
ΘJC
0.40
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1
MBR30045CT(R)L
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
www.genesicsemi.com/silicon-products/schottky-rectifiers/
3
stm32/stm8
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