ZX3CDBS1M832
MPPS™ Miniature Package Power Solutions
20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY
DIODE COMBINATION DUAL
SUMMARY
NPN Transistor
Schottky Diode
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP this combination dual
comprises an ultra low saturation PNP transistor and a 1A Schottky barrier
diode. This excellent combination provides users with highly efficient
performance in applications including DC-DC and charging circuits.
Users will also gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
3mm x 2mm Dual Die MLP
V
CEO
= 20V; R
SAT
= 47m ;
C
= 4.5A
V
R
= 40V; V
F
= 500mV (@1A); I
C
=1A
C
Cathode
FEATURES
•
Extremely Low Saturation Voltage
(150mV @1A)
•
H
FE
characterised up to 6A
•
I
C
= 4.5A Continuous Collector Current
•
Extremely Low V
F
, fast switching Schottky
•
3mm x 2mm MLP
B
E
Anode
APPLICATIONS
•
DC - DC Converters
•
Mobile Phones
•
Charging Circuits
•
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZX3CDBS1M832TA
ZX3CDBS1M832TC
REEL
7
13
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
3mm x 2mm Dual MLP
underside view
DEVICE MARKING
BS1
ISSUE 1 - JUNE 2002
1
ZX3CDBS1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Transistor
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current (a)(f)
Continuous Collector Current (b)(f)
Base Current
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
Storage Temperature Range
Junction Temperature
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
C
I
B
P
D
P
D
P
D
P
D
P
D
P
D
T
stg
T
j
40
20
7.5
12
4.5
5
1000
1.5
12
2.45
19.6
1
8
1.13
9
1.7
13.6
3
24
-55 to +150
150
V
V
V
A
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
°C
SYMBOL
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 500mW.
SYMBOL
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
VALUE
83
51
125
111
73.5
41.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
ISSUE 1 - JUNE 2002
2
ZX3CDBS1M832
TRANSISTOR TYPICAL CHARACTERISTICS
3.5
Max Power Dissipation (W)
I
C
Collector Current (A)
10
V
CE(SAT)
Limited
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1oz Cu
Note (d)(f)
2oz Cu
Note (e)(g)
T
amb
=25°C
1
DC
1s
100ms
10ms
Note (a)(f)
Single Pulse, T
amb
=25°C
1ms
100us
2oz Cu
Note (a)(f)
1oz Cu
Note (d)(g)
0.1
0.01
0.1
1
10
25
50
75
100
125
150
V
CE
Collector-Emitter Voltage (V)
Temperature (°C)
Safe Operating Area
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
80
60
D=0.5
Note (a)(f)
Derating Curve
225
200
175
150
125
100
75
50
25
0
0.1
1oz copper
Note (f)
1oz copper
Note (g)
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
2oz copper
Note (f)
2oz copper
Note (g)
0
100µ 1m
10m 100m
1
10
100
1k
1
10
100
Pulse Width (s)
Board Cu Area (sqcm)
Transient Thermal Impedance
3.5
T
amb
=25°C
2oz copper
Note (g)
Thermal Resistance v Board Area
P
D
Dissipation (W)
3.0
T
j max
=150°C
2.5
2.0
1.5
1.0
0.5
0.0
0.1
Continuous
2oz copper
Note (f)
1oz copper
Note (f)
1oz copper
Note (g)
1
10
100
Board Cu Area (sqcm)
Power Dissipation v Board Area
ISSUE 1 - JUNE 2002
3
ZX3CDBS1M832
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Schottky Diode
Continuous Reverse Voltage
Forward Voltage @ I
F
=1000mA(typ)
Forward Current
Average Peak Forward Current D=50%
Non Repetitive Forward Current t≤ 100 s
t≤ 10ms
Power Dissipation at TA=25°C (a)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (c)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(f)
Linear Derating Factor
Power Dissipation at TA=25°C (d)(g)
Linear Derating Factor
Power Dissipation at TA=25°C (e)(g)
Linear Derating Factor
Storage Temperature Range
Junction Temperature
V
R
V
F
I
F
I
FAV
I
FSM
P
D
P
D
P
D
P
D
P
D
P
D
T
stg
T
j
40
425
1850
3
12
7
1.2
12
2
20
0.8
8
0.9
9
1.36
13.6
2.4
24
-55 to +150
125
V
A
mA
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
°C
SYMBOL
VALUE
UNIT
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(f)
Junction to Ambient (b)(f)
Junction to Ambient (c)(f)
Junction to Ambient (d)(f)
Junction to Ambient (d)(g)
Junction to Ambient (e)(g)
Notes
(a) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached.
The
copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(b) Measured at t<5 secs for a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed
pads attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(c) For a dual device surface mounted on 8 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with minimal lead connections only.
(d) For a dual device surface mounted on 10 sq cm single sided 1oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(e) For a dual device surface mounted on 85 sq cm single sided 2oz copper on FR4 PCB, in still air conditions
with all exposed pads attached
attached.
The copper area is split down the centre line into two separate areas with one half connected to each half of the dual device.
(f) For a dual device with one active die.
(g) For dual device with 2 active die running at equal power.
(h) Repetitive rating - pulse width limited by max junction temperature. Refer to Transient Thermal Impedance graph.
(i) The minimum copper dimensions required for mounting are no smaller than the exposed metal pads on the base of the device as shown in the
package dimensions data. The thermal resistance for a dual device mounted on 1.5mm thick FR4 board using minimum copper 1 oz weight, 1mm
wide tracks and one half of the device active is Rth = 250°C/W giving a power rating of Ptot = 400mW.
SYMBOL
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
VALUE
83
51
125
111
73.5
41.7
UNIT
°C/W
°C/W
°C/W
°C/W
°C/W
°C/W
ISSUE 1 - JUNE 2002
4
ZX3CDBS1M832
SCHOTTKY TYPICAL CHARACTERISTICS
3.0
Thermal Resistance (°C/W)
80
60
Max Power Dissipation (W)
Note (a)(f)
2.5
2.0
1.5
1.0
0.5
0.0
0
1oz Cu
Note (d)(f)
2oz Cu
Note (e)(g)
T
amb
=25°C
D=0.5
2oz Cu
Note (a)(f)
1oz Cu
Note (d)(g)
40
20
D=0.2
Single Pulse
D=0.05
D=0.1
0
100µ 1m
10m 100m
1
10
100
1k
25
50
75
100
125
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
3.0
T
amb
=25°C
2.5
T
j max
=125°C
Continuous
2oz copper
Note (g)
Derating Curve
225
200
175
150
125
100
75
50
25
0
0.1
Thermal Resistance (°C/W)
P
D
Dissipation (W)
1oz copper
Note (f)
1oz copper
Note (g)
2.0
1.5
1.0
0.5
0.0
0.1
1
1oz copper
Note (f)
1oz copper
Note (g)
2oz copper
Note (f)
2oz copper
Note (f)
2oz copper
Note (g)
10
100
1
10
100
Board Cu Area (sqcm)
Board Cu Area (sqcm)
Power Dissipation v Board Area
Thermal Resistance v Board Area
ISSUE 1 - JUNE 2002
5
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