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ZX3CDBS1M832

Description
4500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Categorysemiconductor    Discrete semiconductor   
File Size344KB,9 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
Download Datasheet Parametric Compare View All

ZX3CDBS1M832 Overview

4500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR

ZX3CDBS1M832 Parametric

Parameter NameAttribute value
Number of terminals10
Transistor polarityNPN
Maximum collector current4.5 A
Maximum Collector-Emitter Voltage20 V
Processing package description3 × 2 MM, MINIATURE, MLP832, 10 PIN
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateDISCONTINUED
packaging shapeRectangle
Package SizeFLATPACK
surface mountYes
Terminal formFLAT
terminal coatingMATTE Tin
Terminal locationFour
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionCOLLECTOR
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Transistor typeUniversal small signal
Minimum DC amplification factor100
Rated crossover frequency140 MHz
ZX3CDBS1M832
MPPS™ Miniature Package Power Solutions
20V NPN LOW SATURATION TRANSISTOR AND 40V, 1A SCHOTTKY
DIODE COMBINATION DUAL
SUMMARY
NPN Transistor
Schottky Diode
DESCRIPTION
Packaged in the new innovative 3mm x 2mm MLP this combination dual
comprises an ultra low saturation PNP transistor and a 1A Schottky barrier
diode. This excellent combination provides users with highly efficient
performance in applications including DC-DC and charging circuits.
Users will also gain several other
key benefits:
Performance capability equivalent to much larger packages
Improved circuit efficiency & power levels
PCB area and device placement savings
Lower package height (0.9mm nom)
Reduced component count
3mm x 2mm Dual Die MLP
V
CEO
= 20V; R
SAT
= 47m ;
C
= 4.5A
V
R
= 40V; V
F
= 500mV (@1A); I
C
=1A
C
Cathode
FEATURES
Extremely Low Saturation Voltage
(150mV @1A)
H
FE
characterised up to 6A
I
C
= 4.5A Continuous Collector Current
Extremely Low V
F
, fast switching Schottky
3mm x 2mm MLP
B
E
Anode
APPLICATIONS
DC - DC Converters
Mobile Phones
Charging Circuits
Motor control
PINOUT
ORDERING INFORMATION
DEVICE
ZX3CDBS1M832TA
ZX3CDBS1M832TC
REEL
7
13
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000
10000
3mm x 2mm Dual MLP
underside view
DEVICE MARKING
BS1
ISSUE 1 - JUNE 2002
1

ZX3CDBS1M832 Related Products

ZX3CDBS1M832 ZX3CDBS1M832TC ZX3CDBS1M832TA
Description 4500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 4500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR 4500 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Number of terminals 10 10 10
surface mount Yes YES YES
Terminal form FLAT FLAT FLAT
Terminal location Four QUAD QUAD
Shell connection COLLECTOR COLLECTOR COLLECTOR
Number of components 1 1 1
transistor applications switch SWITCHING SWITCHING
Transistor component materials silicon SILICON SILICON
Is it Rohs certified? - conform to conform to
Maker - Zetex Semiconductors Zetex Semiconductors
package instruction - 3 X 2 MM, MLP832, 10 PIN 3 X 2 MM, MLP832, 10 PIN
Reach Compliance Code - unknow unknow
ECCN code - EAR99 EAR99
Maximum collector current (IC) - 4.5 A 4.5 A
Collector-emitter maximum voltage - 20 V 20 V
Configuration - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum DC current gain (hFE) - 100 100
JESD-30 code - R-PQFP-F10 R-PQFP-F10
JESD-609 code - e3 e3
Humidity sensitivity level - 1 1
Maximum operating temperature - 150 °C 150 °C
Package body material - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape - RECTANGULAR RECTANGULAR
Package form - FLATPACK FLATPACK
Peak Reflow Temperature (Celsius) - 260 260
Polarity/channel type - NPN NPN
Maximum power dissipation(Abs) - 3 W 3 W
Certification status - Not Qualified Not Qualified
Terminal surface - Matte Tin (Sn) Matte Tin (Sn)
Maximum time at peak reflow temperature - 40 40
Nominal transition frequency (fT) - 140 MHz 140 MHz
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