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KSA928A — PNP Epitaxial Silicon Transistor
October 2014
KSA928A
PNP Epitaxial Silicon Transistor
Features
• Audio Power Amplifier
• Complement to KSC2328A
• 3 W Output Application
1
TO-92L
1. Emitter 2. Collector 3. Base
Ordering Information
Part Number
KSA928AOTA
KSA928AYTA
Top Mark
A928A O-
A928A Y-
Package
TO-92 3L
TO-92 3L
Packing Method
Ammo
Ammo
Absolute Maximum Ratings
(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Junction Temperature
Storage Temperature
Parameter
Value
-30
-30
-5
-2
150
-55 to +150
Unit
V
V
V
A
°C
°C
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed or
low-duty-cycle operations.
© 2002 Fairchild Semiconductor Corporation
KSA928A Rev. 1.1.0
www.fairchildsemi.com
KSA928A — PNP Epitaxial Silicon Transistor
Thermal Characteristics
(3)
Values are at T
A
= 25°C unless otherwise noted.
Symbol
P
D
R
θJA
Power Dissipation
Derate Above 25°C
Parameter
Value
1000
8.0
125
Unit
mW
mW/°C
°C/W
Thermal Resistance, Junction-to-Ambient
Note:
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
BE
(on)
V
CE
(sat)
C
ob
f
T
Parameter
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Base-Emitter On Voltage
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Conditions
I
C
= -100
μA,
I
E
= 0
I
E
= -1 mA, I
C
= 0
V
CB
= -30 V, I
E
= 0
V
EB
= -5 V, I
C
= 0
V
CE
= -2 V, I
C
= -500 mA
V
CE
= -2 V, I
C
= -500 mA
I
C
= -1.5 A, I
B
= -30 mA
V
CB
= -10 V, I
E
= 0,
f = 1 MHz
V
CE
= -2 V, I
C
= -500 mA
Min.
-30
-30
-5
Typ.
Max.
Unit
V
V
V
Collector-Emitter Breakdown Voltage I
C
= -10 mA, I
B
= 0
-100
-100
100
320
-1.0
-2.0
48
120
nA
nA
V
V
pF
MHz
h
FE
Classification
Classification
h
FE
O
100 ~ 200
Y
160 ~ 320
© 2002 Fairchild Semiconductor Corporation
KSA928A Rev. 1.1.0
www.fairchildsemi.com
2
KSA928A — PNP Epitaxial Silicon Transistor
Typical Performance Characteristics
-1400
1000
I
B
= -7mA
V
CE
= -2V
I
C
[mA], COLLECTOR CURRENT
-1200
-1000
I
B
= -5mA
-800
I
B
= -4mA
-600
h
FE
, DC CURRENT CURRENT
-16
I
B
= -6mA
100
I
B
= -3mA
-400
I
B
= -2mA
-200
I
B
= -1mA
0
-2
-4
-6
-8
-10
-12
-14
10
-1
-10
-100
-1000
-5000
0
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[A], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC Current Gain
-1400
I
C
= 50 I
B
V
CE
(sat)[V], SATURATION VOLTAGE
V
CE
= -2V
-1200
-1
o
Ta = 125 C
I
C
[mA], COLLECTOR CURRENT
-1000
-800
-0.1
Ta = 25 C
o
-600
-400
-200
Ta = -40 C
-0.01
-1
-10
-100
-1000
-10000
o
0
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
-10
1.4
I
C
[A], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
-100
I
C
(MAX)PLUSE
I
C
(MAX)
-1
1.2
1.0
1ms
1s
Ta
DC
=
O
pe
C
o
0.8
25
ra
t
io
0.6
n
-0.1
0.4
V
CEO
MAX
-0.01
-0.1
-1
-10
0.2
0.0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
a
[ C], AMBIENT TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2002 Fairchild Semiconductor Corporation
KSA928A Rev. 1.1.0
www.fairchildsemi.com
3
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