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DZ4J110K0R

Description
DIODE ZENER ARRAY 11V SMINI4
CategoryDiscrete semiconductor    diode   
File Size238KB,5 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DZ4J110K0R Overview

DIODE ZENER ARRAY 11V SMINI4

DZ4J110K0R Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionR-PDSO-F4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time10 weeks
Samacsys DescriptionDZ4J110K0R, Zener Diode, Dual Constant Voltage, Surge Absorber 11V ±5% 0.2 W 0.05µA, 4-Pin SMini4 F3 B
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PDSO-F4
Humidity sensitivity level1
Number of components2
Number of terminals4
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.2 W
Nominal reference voltage11 V
Maximum reverse current0.05 µA
Reverse test voltage8 V
surface mountYES
technologyZENER
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Maximum voltage tolerance5%
Working test current5 mA
Doc No.
TT4-EA-12032
Revision.
3
Product Standards
Zener Diode
DZ4J110K0R
DZ4J110K0R
Silicon epitaxial planar type
Unit: mm
For constant voltage / For surge absorption circuit
Features
Excellent rising characteristics of zener current Iz
Low zener operating resistance Rz
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
4
2.0
0.3
3
0.13
1
2
1.25
2.1
0.7
(0.65)
(0.65)
1.3
Marking Symbol:PJ
Basic Part Number :
Dual DZ2J110 (Parallel)
Packaging
Embossed type (Thermo-compression sealing)
3 000 pcs / reel (standard)
1. Anode-1
2. Anode-2
Panasonic
JEITA
Code
3. Cathode-2
4. Cathode-1
SMini4-F3-B
SC-113BB
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Repetitive peak forward current
*1
Total power dissipation
Electrostatic discharge
*2
Junction temperature
Operating ambient temperature
Storage temperature
IFRM
PT
ESD
Tj
Topr
Tstg
Rating
200
200
±8
150
-40 to +85
-55 to +150
Unit
mA
mW
kV
°C
°C
°C
Internal Connection
4
3
Note) *1: Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)
Solder in ( 0.8 mm x 0.8 mm)
*2:
Test method:IEC61000_4_2(C = 150 pF,R = 330
,
Contact discharge:10 times)
1
2
Electrical Characteristics Ta = 25
C 
3
C
Parameter
Symbol
Forward voltage
*1, *2
Zener voltage
Zener operating resistance
Zener rise operating resistance
Reverse current
Temperature coefficient of zener voltage
VF
VZ
RZ
RZK
IR
SZ
Conditions
IF = 10 mA
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 8 V
IZ = 5 mA
Min
10.45
Typ Max
1.0
11.55
Unit
V
V
μA
mV/°C
30
60
0.05
8.3
*3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. Absolute frequency of input and output is 5 MHz.
3. *1: The temperature must be controlled 25 °C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25 °C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25 °C to 150 °C
Page 1 of 4
Established : 2009-12-21
Revised
: 2013-10-04
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