DMC4050SSDQ
40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
I
D
Max
Device
BV
DSS
R
DS(ON)
Max
T
A
= +25°C
(Notes 7 & 9)
Q1
40V
45mΩ @ V
GS
= 10V
60mΩ @ V
GS
= 4.5V
Q2
-40V
45mΩ @ V
GS
= -10V
60mΩ @ V
GS
= -4.5V
5.8A
4.2A
-5.8A
-4.2A
Features and Benefits
Matched N & P R
DS(ON)
–
Minimizes Power Losses
Fast Switching
–
Minimizes Switching Losses
Dual Device
–
Reduces PCB Area
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This MOSFET is designed to meet the stringent requirements of
Automotive applications. It is qualified to AEC-Q101, supported by a
PPAP and is ideal for use in:
3-Phase BLDC Motor
CCFL Backlighting
Mechanical Data
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish
–
Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (Approximate)
SO-8
D1
S1
D1
D2
G1
S2
D1
D2
G1
S1
G2
S2
Equivalent Circuit
G2
Top View
Top View
D2
Ordering Information
(Note 5)
Part Number
DMC4050SSDQ-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s
definitions of Halogen-
and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free
"Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
1 of 12
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April 2016
© Diodes Incorporated
DMC4050SSDQ
Marking Information
C4050SD
YY WW
= Manufacturer’s Marking
C4050SD = Product Type Marking Code
YYWW = Date Code Marking
YY or YY= Year (ex: 16 = 2016)
WW = Week (01 - 53)
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
V
GS
= 10V
(Notes 7 & 9)
T
A
= +70°C (Notes 7 & 9)
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 8 & 9)
(Notes 7 & 9)
(Notes 8 & 9)
Symbol
V
DSS
V
GSS
I
D
I
DM
I
S
I
SM
N-Channel - Q1
40
20
5.8
4.38
4.2
5.3
24.1
2.5
24.1
P-Channel - Q2
-40
20
-5.8
-4.52
-4.2
-5.3
-24.9
-2.5
-24.9
Units
V
A
Pulsed Drain Current
V
GS
= 10V
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Thermal Characteristics
Characteristic
Power Dissipation
Linear Derating Factor
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Operating and Storage Temperature Range
Notes:
Symbol
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 6 & 9)
(Notes 6 & 10)
(Notes 7 & 9)
(Notes 6 & 11)
P
D
R
θJA
R
θJL
T
J,
T
STG
N-Channel - Q1 P-Channel - Q2
1.25
10
1.8
14.3
2.14
17.2
100
70
58
51
-55 to +150
Unit
W
°C/W
°C
6. For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions; the device is
measured when operating in a steady-state condition.
7. Same as Note (6), except the device is measured at t 10 sec.
8. Same as Note (6), except the device is pulsed with D = 0.02 and pulse width 300μs.
9. For a dual device with one active die.
10. For a device with two active die running at equal power.
11. Thermal resistance from junction to solder-point (at the end of the drain lead).
DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
2 of 12
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April 2016
© Diodes Incorporated
DMC4050SSDQ
Thermal Characteristics
(Continued)
R
DS(ON)
I
D
Drain Current (A)
10
1
-I
D
Drain Current (A)
Limited
R
DS(ON)
10
1
Limited
DC
1s
100ms
Single Pulse
T
amb
= 25°C
One active die
10ms
1ms
100us
DC
1s
100ms
Single Pulse
T
amb
= 25°C
One active die
10ms
1ms
100us
100m
10m
0.1
100m
10m
0.1
1
10
1
10
V
DS
Drain-Source Voltage (V)
N-channel Safe Operating Area
Thermal Resistance (°C/W)
100
80
60
40
D=0.2
D=0.5
R(theta junction-to-ambient), R
One active die
-V
DS
Drain-Source Voltage (V)
P-channel Safe Operating Area
Max Power Dissipation (W)
2.0
1.5
1.0
0.5
0.0
Two active die
One active die
JA
Single Pulse
D=0.05
D=0.1
20
0
100μ
1m
10m 100m
1
10
100
1k
0
25
50
75
100
125
150
Pulse Width (s)
Temperature (°C)
Transient Thermal Impedance
Maximum Power (W)
Single Pulse
T
amb
= 25°C
One active die
Derating Curve
100
10
1
100μ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
3 of 12
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April 2016
© Diodes Incorporated
DMC4050SSDQ
Electrical Characteristics
(Q1 N-Channel) (@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 12)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS
(Note 12)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 12)
DYNAMIC CHARACTERISTICS
(Note 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
FS
|
V
SD
C
ISS
C
OSS
C
RSS
R
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
Min
40
—
—
0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.3
20
33
12.6
0.7
1,790.8
160.6
120.5
1.03
37.56
7.8
6.6
8.08
15.14
24.29
5.27
Max
—
1.0
±100
1.8
45
60
—
1.0
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= 250μA
V
DS
= 40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 3A
V
GS
= 4.5V, I
D
= 3A
V
DS
= 5V, I
D
= 3A
V
GS
= 0V, I
S
= 1A
V
DS
= 20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= 10V, V
DS
= 20V,
I
D
= 3A
V
GS
= 10V, V
DS
= 20V,
I
D
= 3A
Electrical Characteristics
(Q2 P-Channel) (@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
(Note 12)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current T
J
= +25°C
Gate-Source Leakage
ON CHARACTERISTICS
(Note 12)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 12)
DYNAMIC CHARACTERISTICS
(Note 13)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
|Y
FS
|
V
SD
C
ISS
C
OSS
C
RSS
R
G
Q
G
Q
GS
Q
GD
t
D(ON)
t
R
t
D(OFF)
t
F
Min
-40
—
—
-0.8
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
-1.3
28
30
16.6
-0.7
1,643.17
179.13
127.82
6.43
33.66
5.54
7.30
6.85
14.72
53.65
30.86
Max
—
-1.0
±100
-1.8
45
60
—
-1.0
—
—
—
—
—
—
—
—
—
—
—
Unit
V
μA
nA
V
mΩ
S
V
pF
pF
pF
Ω
nC
nC
nC
ns
ns
ns
ns
Test Condition
V
GS
= 0V, I
D
= -250μA
V
DS
= -40V, V
GS
= 0V
V
GS
= ±20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250μA
V
GS
= -10V, I
D
= -3A
V
GS
= -4.5V, I
D
= -3A
V
DS
= -5V, I
D
= -3A
V
GS
= 0V, I
S
= -1A
V
DS
= -20V, V
GS
= 0V,
f = 1.0MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
GS
= -10V, V
DS
= -20V,
I
D
= -3A
V
GS
= -10V, V
DS
= -20V,
I
D
= -3A
12. Short duration pulse test used to minimize self-heating effect.
13. Guaranteed by design. Not subject to production testing.
DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
4 of 12
www.diodes.com
April 2016
© Diodes Incorporated
DMC4050SSDQ
Typical Characteristics
(Q1 N-Channel)
30
25
V
GS
= 8.0V
30
25
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
20
V
GS
= 4.5V
I
D
, DRAIN CURRENT (A)
20
15
V
GS
= 4.0V
15
10
T
A
= 150°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
10
V
GS
= 3.5V
5
V
GS
= 2.5V
V
GS
= 3.0V
5
0
T
A
= 125°C
0
0
0.5
1
1.5
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
2
0
1
2
3
4
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
5
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ( )
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE ( )
0.06
0.05
0.04
V
GS
= 10V
0.03
0.04
V
GS
= 4.5V
T
A
= 150°C
0.03
0.02
T
A
= 125°C
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.02
V
GS
= 10V
0.01
0.01
0
0
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
30
0
5
10
15
20
25
I
D
, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
30
1.7
1.5
V
GS
= 10V
I
D
= 20A
0.06
R
DSON
, DRAIN-SOURCE ON-RESISTANCE ( )
R
DSON
, DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
0.05
1.3
V
GS
= 4.5V
I
D
= 10A
0.04
1.1
0.03
V
GS
= 4.5V
I
D
= 10A
0.9
0.02
V
GS
= 10V
I
D
= 20A
0.7
0.5
-50
0.01
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
-25
0
-50
-25
0
25
50
75 100 125 150
T
A
, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
DMC4050SSDQ
Document number: DS38781 Rev. 1 - 2
5 of 12
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April 2016
© Diodes Incorporated
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