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FDD3860 N-Channel PowerTrench
®
MOSFET
September 2016
FDD3860
N-Channel PowerTrench
®
MOSFET
100 V, 29 A, 36 mΩ
Features
Max r
DS(on)
= 36 mΩ at V
GS
= 10 V, I
D
= 5.9 A
High Performance Trench Technology for Extremely Low
r
DS(on)
100% UIL Tested
RoHS Compliant
General Description
This N-Channel MOSFET is rugged gate version of Fairchild
Semiconductor‘s advanced Power Trench
®
process. This part is
tailored for low r
DS(on)
and low Qg figure of merit, with avalanche
ruggedness for a wide range of switching applications.
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
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唉，sst39vf1601芯片坏了------------------------------------------------------------
jflash-s3c44b0x v1.0 (2003-8-26)
origin made by J.D&T Co.,Ltd ( You Young-chang )
origin made by ATMEL Co.,Ltd
modified by...
Analog electronics
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