BSL315P
OptiMOS™-P 2 Small-Signal-Transistor
Features
• Dual P-channel
• Enhancement mode
• Logic level (4.5V rated)
• Avalanche rated
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=10 V
V
GS
=4.5 V
I
D
-30
150
270
-1.5
A
V
mW
PG-TSOP-6
6
5
4
1
2
3
Type
BSL315P
Package
Tape and Reel Information
Marking
sPF
Lead Free
Yes
Packing
Non dry
PG-TSOP-6 H6327: 3000 pcs/ reel
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
1)
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=-1.5 A,
R
GS
=25
W
I
D
=-1.5 A,
V
DS
=-16V,
di /dt =-200A/µs,
T
j,max
=150 °C
Value
-1.5
-1.18
-6
11
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
0.5
-55 ... 150
0 (<250V)
260 °C
55/150/56
V
W
°C
V
°C
°C
Remark: one of both transistors in operation
Rev 2.3
page 1
2013-11-07
BSL315P
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance,
junction - ambient
Values
typ.
max.
Unit
R
thJA
minimal footprint
2)
-
-
250
K/W
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
V
(BR)DSS
V
GS
= 0V,
I
D
=-250µA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=-11µA
V
DS
=-30V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=-30V,
V
GS
=0V,
T
j
=150 °C
-30
-2.0
-
-
-1.5
-
-
-1.0
-1
V
mA
-
-
-
-
-
-
-
173
109
2.7
-100
-100
270
150
-
S
nA
mW
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=-20V,
V
DS
=0V
V
GS
=4.5 V,
I
D
=-1.1 A
V
GS
=10 V,
I
D
=-1.5 A
Transconductance
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=-1.18 A
Performed on 40mm
2
FR4 PCB. The traces are 1mm wide, 70μm thick and 20mm long; they are present on both
sides of the PCB.
2)
Rev 2.3
page 2
2013-11-07
BSL315P
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
I
S
I
S,pulse
V
SD
t
rr
Q
rr
V
GS
=0 V,
I
F
=-1.5 A,
T
j
=25 °C
V
R
=10 V,
I
F
=-1.5 A,
di
F
/dt =100 A/µs
-
T
A
=25 °C
-
-
-
-
-
-0.86
8.2
2.1
-6
-1.1
-
-
V
ns
nC
-
0.5
A
Q
gs
Q
gd
Q
g
V
plateau
V
DD
=15 V,
I
D
=1.5 A,
V
GS
=0 to 5 V
-
-
-
-
-0.6
-1.2
-2.3
-2.9
-
-
-
-
V
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=-15V,
V
GS
=-10 V,
I
D
=-1.5 A,
R
G,ext
=6
W
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
212
69
56
5.0
6.5
14.3
7.5
282
91
84
-
-
-
-
ns
pF
Values
typ.
max.
Unit
Rev 2.3
page 3
2013-11-07
BSL315P
1 Power dissipation
P
tot
=f(T
A
)
2 Drain current
I
D
=f(T
A
);
V
GS
≥10 V
2
0.5
1.5
0.375
P
tot
[W]
I
D
[A]
0
40
80
120
1
0.25
0.125
0.5
0
0
0
20
40
60
80
100
120
140
160
T
A
[°C]
T
A
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
A
=25 °C;
D
=0
parameter:
t
p
10
1
1 µs
10 µs
10 ms
1 ms
100 µs
4 Max. transient thermal impedance
Z
thJA
=f(t
p
)
parameter:
D
=t
p
/T
10
3
0.5
10
0
DC
10
2
0.2
0.1
Z
thJA
[K/W]
0.05
0.02
I
D
[A]
10
-1
10
1
0.01
single pulse
10
-2
10
0
10
-3
10
-1
10
0
10
1
10
2
10
-1
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
[V]
t
p
[s]
Rev 2.3
page 4
2013-11-07
BSL315P
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
4
4V
10 V
4.5 V
3.5 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
500
450
400
3.3 V
2.8 V
3V
3.3 V
3.5 V
3
350
R
DS(on)
[mW]
300
250
200
150
100
50
10 V
4V
4.5 V
I
D
[A]
2
3V
2.8 V
1
0
0
1
2
3
0
0
1
2
3
4
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
4
8
3
6
25 °C
2
g
fs
[S]
150 °C
I
D
[A]
4
1
2
0
0
1
2
3
4
0
0
2
4
6
8
V
GS
[V]
I
D
[A]
Rev 2.3
page 5
2013-11-07
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