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DDB2U30N08VRBOMA1

Description
IGBT MODULE 800V 50A
CategoryDiscrete semiconductor    The transistor   
File Size236KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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DDB2U30N08VRBOMA1 Overview

IGBT MODULE 800V 50A

DDB2U30N08VRBOMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeMODULE
package instructionFLANGE MOUNT, R-XUFM-X12
Contacts12
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)25 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR
JESD-30 codeR-XUFM-X12
Number of components1
Number of terminals12
Maximum operating temperature150 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal off time (toff)145 ns
Nominal on time (ton)38 ns
Base Number Matches1
Technische Information / technical information
IGBT-Module
IGBT-modules
DDB2U30N08VR
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Diode-Gleichrichter / diode-rectifier
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Höchstzulässige Werte / maximum rated values
Vorläufige Daten / preliminary data
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Charakteristische Werte / characteristic values
0
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DDB2U30N08VRBOMA1 Related Products

DDB2U30N08VRBOMA1 DDB2U30N08VR
Description IGBT MODULE 800V 50A Crystals 8.0MHz 20ppm 18pF -40C+85C
Is it lead-free? Contains lead Contains lead
Is it Rohs certified? conform to conform to
Maker Infineon Infineon
Parts packaging code MODULE MODULE
package instruction FLANGE MOUNT, R-XUFM-X12 FLANGE MOUNT, R-XUFM-X12
Contacts 12 12
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 25 A 25 A
Collector-emitter maximum voltage 600 V 600 V
Configuration SINGLE WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR SINGLE WITH BUILT-IN DIODE, SINGLE PHASE DIODE BRIDGE AND THERMISTOR
JESD-30 code R-XUFM-X12 R-XUFM-X12
Number of components 1 1
Number of terminals 12 12
Maximum operating temperature 150 °C 150 °C
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED
Transistor component materials SILICON SILICON
Nominal off time (toff) 145 ns 145 ns
Nominal on time (ton) 38 ns 38 ns
Base Number Matches 1 1

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