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Datasheet> All Categories > Discrete semiconductor> diode> MBRF40080R
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MBRF40080R

Description
DIODE SCHOTTKY 80V 200A TO244AB
CategoryDiscrete semiconductor    diode   
File Size454KB，3 Pages
ManufacturerGeneSiC
Websitehttp://www.genesicsemi.com/
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MBRF40080R Overview

DIODE SCHOTTKY 80V 200A TO244AB

MBRF40080R Parametric

Parameter NameAttribute value
MakerGeneSiC
Reach Compliance Codecompliant
applicationPOWER
Shell connectionANODE
ConfigurationCOMMON ANODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.84 V
JEDEC-95 codeTO-244AB
JESD-30 codeR-PUFM-X2
Maximum non-repetitive peak forward current3000 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current200 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage80 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formUNSPECIFIED
Terminal locationUPPER

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MBRF40045 thru MBRF400100R
Silicon Power
Schottky Diode
Features
• High Surge Capability
• Types from 45 V to 100 V V
RRM
• Not ESD Sensitive
TO-244AB Package
V
RRM
= 45 V - 100 V
I
F(AV)
= 400 A
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
V
RRM
V
RMS
V
DC
T
j
T
stg
Conditions
MBRF40045(R) MBRF40060(R) MBRF40080(R) MBRF400100(R)
45
32
45
-55 to 150
-55 to 150
60
42
60
-55 to 150
-55 to 150
80
57
80
-55 to 150
-55 to 150
100
70
100
-55 to 150
-55 to 150
Unit
V
V
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Average forward current
(per pkg)
Peak forward surge current
(per leg)
Maximum forward voltage
(per leg)
Reverse current at rated DC
blocking voltage (per leg)
Symbol
I
F(AV)
I
FSM
V
F
I
R
Conditions
T
C
= 125 °C
t
p
= 8.3 ms, half sine
I
FM
= 200 A, T
j
= 25 °C
T
j
= 25 °C
T
j
= 100 °C
T
j
= 150 °C
MBRF40045(R) MBRF40060(R) MBRF40080(R) MBRF400100(R)
400
3000
0.70
1
10
50
0.35
400
3000
0.75
1
10
50
0.35
400
3000
0.84
1
10
50
0.35
400
3000
0.84
1
10
50
0.35
Unit
A
A
V
mA
Thermal characteristics
Thermal resistance, junction-
case (per leg)
R
ΘJC
°C/W
www.genesicsemi.com/silicon-products/schottky-rectifiers/
1

MBRF40080R Related Products

MBRF40080R MBRF400100R MBRF40060R MBRF400100 MBRF40080 MBRF40045 MBRF40060 MBRF40045R
Description DIODE SCHOTTKY 80V 200A TO244AB Schottky Diodes u0026 Rectifiers Schottky Rectifier - 100 V - 400 A - TO-244AB Schottky Diodes u0026 Rectifiers Schottky Rectifier - 60 V - 400 A - TO-244AB Schottky Diodes u0026 Rectifiers Schottky Rectifier - 100 V - 400 A - TO-244AB Schottky Diodes & Rectifiers Schottky Rectifier - 80 V - 400 A - TO-244AB Schottky Diodes & Rectifiers Schottky Rectifier - 45 V - 400 A - TO-244AB Schottky Diodes & Rectifiers Schottky Rectifier - 60 V - 400 A - TO-244AB DIODE SCHOTTKY 45V 200A TO244AB
Maker GeneSiC GeneSiC GeneSiC GeneSiC GeneSiC GeneSiC GeneSiC GeneSiC
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant
application POWER POWER POWER POWER POWER POWER POWER POWER
Shell connection ANODE ANODE ANODE CATHODE CATHODE CATHODE CATHODE ANODE
Configuration COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS COMMON ANODE, 2 ELEMENTS
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.84 V 0.84 V 0.75 V 0.84 V 0.84 V 0.7 V 0.75 V 0.7 V
JEDEC-95 code TO-244AB TO-244AB TO-244AB TO-244AB TO-244AB TO-244AB TO-244AB TO-244AB
JESD-30 code R-PUFM-X2 R-PUFM-X2 R-PUFM-X2 R-PUFM-X2 R-PUFM-X2 R-PUFM-X2 R-PUFM-X2 R-PUFM-X2
Maximum non-repetitive peak forward current 3000 A 3000 A 3000 A 3000 A 3000 A 3000 A 3000 A 3000 A
Number of components 2 2 2 2 2 2 2 2
Phase 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Maximum output current 200 A 200 A 200 A 200 A 200 A 200 A 200 A 200 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 80 V 100 V 60 V 100 V 80 V 45 V 60 V 45 V
Maximum reverse current 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA 1000 µA
surface mount NO NO NO NO NO NO NO NO
technology SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY SCHOTTKY
Terminal form UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER UPPER UPPER UPPER UPPER UPPER UPPER
Base Number Matches - - 1 1 1 1 - 1

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