This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors
2SC3829
Silicon NPN epitaxial planar type
For UHF band low-noise amplification
■
Features
0.40
+0.10
–0.05
3
Unit: mm
0.16
+0.10
–0.06
M
Di ain
sc te
on na
tin nc
ue e/
d
•
Low noise figure NF
•
High gain
•
High forward transfer gain
S
21e
2
•
Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing
1.50
+0.25
–0.05
2.8
+0.2
–0.3
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Symbol
V
CBO
V
CEO
I
C
V
EBO
P
C
T
j
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Storage temperature
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
EBO
h
FE
f
T
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
e/
Forward current transfer ratio
na
nc
Transition frequency
ain
te
Collector output capacitance
(Common base, input open circuited)
Forward transfer gain
Maximum unilateral power gain
Noise figure
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: February 2003
tin
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1
2
(0.95) (0.95)
1.9
±0.1
2.90
+0.20
–0.05
10˚
1.1
+0.2
–0.1
(0.65)
Rating
15
10
2
Unit
V
V
1.1
+0.3
–0.1
V
80
mA
°C
1: Base
2: Emitter
3: Collector
EIAJ: SC-59
Mini3-G1 Package
200
150
mW
°C
Marking Symbol: 3M
T
stg
−55
to
+150
Conditions
Min
15
Typ
0 to 0.1
Max
Unit
V
I
C
=
10
µA,
I
E
=
0
I
C
=
100
µA,
I
B
=
0
V
CB
=
10 V, I
E
=
0
V
EB
=
2 V, I
C
=
0
10
V
sc
on
1
µA
1
µA
Di
V
CE
=
8 V, I
C
=
20 mA
50
5
150
6
0.7
300
1.2
V
CE
=
8 V, I
C
=
20 mA, f
=
0.8 GHz
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
GHz
pF
C
ob
S
21e
2
G
UM
NF
V
CE
=
8 V, I
C
=
20 mA, f
=
0.8 GHz
V
CE
=
8 V, I
C
=
20 mA, f
=
0.8 GHz
V
CE
=
8 V, I
C
=
20 mA, f
=
0.8 GHz
10.0
13.5
15
dB
M
dB
2
dB
0.4
±0.2
5˚
SJC00138BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC3829
P
C
T
a
240
24
I
C
V
CE
T
a
=
25°C
I
B
=
200
µA
160
µA
16
140
µA
120
µA
100
µA
80
µA
60
µA
40
µA
20
µA
180
µA
I
C
V
BE
120
V
CE
=
8 V
Collector power dissipation P
C
(mW)
200
20
100
Collector current I
C
(mA)
Collector current I
C
(mA)
25°C
80
T
a
=
75°C
−25°C
160
0
0
40
80
120
160
Ambient temperature T
a
(
°C
)
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
100
I
C
/ I
B
=
10
10
1
T
a
=
75°C
25°C
−25°C
0.1
0.01
0.1
1
10
100
Collector current I
C
(mA)
C
ob
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
2.4
na
nc
Maximum unilateral power gain G
UM
2.0
I
E
=
0
f
=
1 MHz
T
a
=
25°C
1.6
16
Noise figure NF (dB)
M
1.2
0.8
0.4
0
0.1
1
10
100
Collector-base voltage V
CB
(V)
2
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0
0
2
4
6
8
10
12
M
Di ain
sc te
on na
tin nc
ue e/
d
120
12
60
80
8
40
40
4
20
0
0
0.4
0.8
1.2
1.6
2.0
Collector-emitter voltage V
CE
(V)
Base-emitter voltage V
BE
(V)
h
FE
I
C
f
T
I
C
600
V
CE
=
8 V
12
Forward current transfer ratio h
FE
400
Transition frequency f
T
(GHz)
500
10
V
CE
=
8 V
f
=
800 MHz
T
a
=
25°C
T
a
=
75°C
8
300
6
25°C
200
4
−25°C
100
2
0
0.1
1
10
100
0
0.1
1
10
100
Collector current I
C
(mA)
Collector current I
C
(mA)
sc
on
G
UM
I
C
NF
I
C
Di
24
20
V
CE
=
8 V
f
=
800 MHz
T
a
=
25°C
12
10
V
CE
=
8 V
(R
g
=
50
Ω)
f
=
800 MHz
T
a
=
25°C
te
(dB)
e/
8
ain
12
6
8
4
4
2
0
0.1
1
10
100
0
0.1
1
10
100
Collector current I
C
(mA)
Collector current I
C
(mA)
SJC00138BED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–
Any applications other than the standard applications intended.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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ue
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d
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life
so ate
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.co inf
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.jp orm
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n.
M
ain
te
na
nc
M
Di ain
sc te
on na
tin nc
ue e/
d
e/
Di
sc
on
Embedded System
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