NXP power LDMOS
transistors BLF7G24LS-100
and BLF7G24LS-140
RF power transistors for leading LTE
basestation performance at 2.3 to 2.4 GHz
Designed for LTE basestations and built in industry-leading Gen7 LDMOS, these highly DPD-
friendly transistors cover the entire frequency range of 2.3 to 2.4 GHz. They enable asymmetrical
Doherty designs delivering efficiencies of 44% and 15 dB of gain.
Key features
}
Average output power: 20 W (-100 type) and 30 W (-140 type)
}
Power gain: 18 dB (-100) and 18.5 dB (-140)
}
Drain efficiency: 27% (-100) and 26.5% (-140)
}
ACPR: -46 dBc (-100) and -45 dBc (-140)
Key benefits
}
Field-proven ruggedness and reliability
}
Reduced energy consumption of basestations due to highly
efficient Doherty circuit
}
Excellent thermal stability
}
Easily linearizable due to low memory effects
}
Very consistent device performance enabling best
manufacturing yields
Applications
}
Basestations and multi-carrier applications in the 2.3 to
2.4 GHz range
NXP, the market leader in RF power devices, uses its rugged
Gen7 LDMOS technology to produce these RF power
transistors, optimized for LTE 2.3 to 2.4 GHz applications.
Designed to work together in an asymmetrical Doherty circuit,
these ceramic transistors deliver best-in-class efficiency. In
this configuration, the BLF7G24L(S)-100 is used as the main
amplifier and the BLF7G24L(S)-140 as the peak amplifier.
Both devices feature excellent thermal stability and are
designed for low memory effects. This results in superior
digital pre-distortion (DPD) capability. These devices also
include integrated ESD protection, and comply with
directive 2002/95/EC regarding the Restriction of Hazardous
Substances (RoHS).
Both RF Power devices are backed by NXP’s world-class
application support, which includes reference designs,
application notes, physics-based simulation models, and, on
request, customer-tailored support, to reduce time to market.
In addition, NXP’s high-volume manufacturing operations
ensure device consistency and high end-product yields.
2.3 to 2.4 GHz basestation line-up
Test signal performance
Function
Final
Final
Type
BLF7G24L(S)-100
BLF7G24L(S)-140
f
min
(MHz)
2300
2300
f
max
(MHz)
2400
2400
CW
P1dB (W)
350
500
V
DS
(V)
28
28
P
L
(W)
14
30
BO (dB)
8.5
6.7
D
(%)
G
p
(dB)
18
17
Test
signal
IS-95
IS-95
Package
SOT502
SOT502
24
22
Doherty block diagram – as used by BLF7G24L(S) family
Asymmetrical Doherty demoboard using BLF7G24LS-100 as
the main amplifier and BLF7G24LS-140 as the peak amplifier
www.nxp.com
© 2011 NXP Semiconductors N.V.
All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The
information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and
may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof
does not convey nor imply any license under patent- or other industrial or intellectual property rights.
Date of release: December 2011
Document order number: 9397 750 17200
Printed in the Netherlands
Power technology
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