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ES1ME-TP

Description
DIODE GEN PURP 1KV 1A DO214AC
Categorysemiconductor    Discrete semiconductor   
File Size350KB,4 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
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ES1ME-TP Overview

DIODE GEN PURP 1KV 1A DO214AC

ES1ME-TP Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)1000V
Current - average rectification (Io)1A
Voltage at different If - Forward (Vf1.7V @ 1A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)100ns
Current at different Vr - Reverse leakage current5µA @ 1000V
Capacitance at different Vr, F45pF @ 4V,1MHz
Installation typesurface mount
Package/casingDO-214AC,SMA
Supplier device packagingDO-214AC(SMAE)
Operating Temperature - Junction-50°C ~ 150°C
NOT RECOMMENDED FOR NEW DESIGNS
USE
ES1A-LTP~ES1J-LTP
Series
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
ES1AE
THRU
ES1ME
1 Amp
Ultra
Fast
Recovery
Silicon Rectifier
50 to 1000 Volts
DO-214AC
(SMAE)
H
Features
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
High Temp Soldering: 260 C for 10 Seconds At Terminals
Superfast Recovery Times For High Efficiency
Halogen
free available upon request by adding suffix "-HF"
Operating Temperature: -50 C to +150 C
Storage Temperature: -50 C to +150 C
Maximum Thermal Resistance; 15 C/W Junction To Lead
MCC
Part
Number
ES1AE
ES1BE
ES1CE
ES1DE
ES1GE
ES1JE
ES1KE
ES1ME
Device
Marking
ES1A
ES1B
ES1C
ES1D
ES1G
ES1J
ES1K
ES1M
Maximum
Recurrent
Peak Reverse
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Maximum
RMS
Voltage
35V
70V
105V
140V
280V
420V
560V
700V
Maximum
DC
Blocking
Voltage
50V
100V
150V
200V
400V
600V
800V
1000V
Maximum Ratings
Cathode Band
J
A
C
Electrical Characteristics @ 25 C Unless Otherwise Specified
Average Forward
I
F(AV)
1.0A
T
J
= 75 C
Current
Peak Forward Surge
I
FSM
30A
8.3ms, half sine
Current
Maximum
Instantaneous
Forward Voltage
V
F
ES1AE-DE
.975V I
FM
= 1.0A;
ES1GE-JE
1.35V
T
J
= 25 C*
ES1KE~ME
1.70V
Maximum DC
I
R
Reverse Current At
5 A
T
J
= 25 C
Rated DC Blocking
100 A T
J
= 100 C
Voltage
Maximum Reverse
Recovery Time
T
rr
I
F
=0.5A, I
R
=1.0A,
ES1AE-DE
50ns
ES1GE-KE
75ns
I
rr
=0.25A
ES1ME
100ns
Typical Junction
C
J
45pF
Measured at
Capacitance
1.0MHz, V
R
=4.0V
*Pulse test: Pulse width 200 sec, Duty cycle 2%
Note:
1.
High Temperature Solder Exemptions Applied, see EU Directive Annex 7.
G
E
D
B
DIMENSIONS
INCHES
MIN
.079
.045
.002
---
.030
.189
.157
.090
MM
MIN
2.01
1.15
.05
---
.76
4.80
4.00
2.29
DIM
A
B
C
D
E
G
H
J
MAX
.096
.071
.008
.02
.060
.208
.180
.115
MAX
2.44
1.80
.20
.51
1.52
5.30
4.57
2.92
NOTE
SUGGESTED SOLDER
PAD LAYOUT
0.090”
0.085”
0.070”
Revision:
C
www.mccsemi.com
1 of 4
2015/10/19

ES1ME-TP Related Products

ES1ME-TP ES1JE-TP ES1KE-TP ES1AE-TP ES1BE-TP ES1DE-TP ES1GE-TP ES1CE-TP
Description DIODE GEN PURP 1KV 1A DO214AC DIODE GEN PURP 600V 1A DO214AC DIODE GEN PURP 800V 1A DO214AC DIODE GEN PURP 50V 1A DO214AC DIODE GEN PURP 100V 1A DO214AC DIODE GEN PURP 200V 1A DO214AC DIODE GEN PURP 400V 1A DO214AC DIODE GEN PURP 150V 1A SMAE
Diode type standard standard standard standard standard standard standard standard
Voltage - DC Reverse (Vr) (Maximum) 1000V 600V 800V 50V 100V 200V 400V 150V
Current - average rectification (Io) 1A 1A 1A 1A 1A 1A 1A 1A
Voltage at different If - Forward (Vf 1.7V @ 1A 1.35V @ 1A 1.7V @ 1A 975mV @ 1A 975mV @ 1A 975mV @ 1A 1.35V @ 1A 975mV @ 1A
speed Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Standard recovery >500ns, >200mA (Io) Standard recovery >500ns, >200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Current at different Vr - Reverse leakage current 5µA @ 1000V 5µA @ 600V 5µA @ 800V 5µA @ 50V 5µA @ 100V 5µA @ 200V 5µA @ 400V 5µA @ 150V
Capacitance at different Vr, F 45pF @ 4V,1MHz 45pF @ 4V,1MHz 45pF @ 4V,1MHz 45pF @ 4V,1MHz 45pF @ 4V,1MHz 45pF @ 4V,1MHz 45pF @ 4V,1MHz 45pF @ 4V,1MHz
Installation type surface mount surface mount surface mount surface mount surface mount surface mount surface mount surface mount
Package/casing DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA DO-214AC,SMA
Supplier device packaging DO-214AC(SMAE) DO-214AC(SMAE) DO-214AC(SMAE) DO-214AC(SMAE) DO-214AC DO-214AC(SMAE) DO-214AC(SMAE) SMAE
Operating Temperature - Junction -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C -50°C ~ 150°C
Reverse recovery time (trr) 100ns 75ns 75ns - 50ns 50ns 75ns 50ns

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