RN1110CT, RN1111CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1110CT, RN1111CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
Unit: mm
0.6±0.05
0.5±0.03
0.25±0.03
•
Complementary to RN2110CT, RN2111CT
0.25±0.03
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
１
２
0.35±0.02
Equivalent Circuit
C
0.15±0.03
0.65±0.02
0.05±0.03
•
Incorporating a bias resistor into a transistor reduces parts count.
３
B
R1
1.BASE
CST3
JEDEC
JEITA
TOSHIBA
2.EMITTER
3.COLLECOTR
E
2-1J1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
20
20
5
50
50
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Weight:0.75 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
0.38 +0.02
-0.03
0.05±0.03
―
―
2004-10
1
2014-03-01
RN1110CT, RN1111CT
Electrical Characteristics
(Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Input resistor
RN1110CT
RN1111CT
Symbol
I
CBO
I
EBO
h
FE
V
CE (sat)
C
ob
R1
Test Condition
V
CB
=
20 V, I
E
=
0
V
EB
=
5 V, I
C
=
0
V
CE
=
5 V, I
C
=
1 mA
I
C
=
5 mA, I
B
=
0.25 mA
V
CB
=
10 V, I
E
=
0, f
=
1 MHz
⎯
Min
⎯
⎯
300
⎯
⎯
3.76
8
1.2
4.7
10
Typ.
⎯
⎯
⎯
Max
100
100
⎯
0.15
⎯
5.64
12
V
pF
kΩ
Unit
nA
nA
2
2014-03-01
RN1110CT, RN1111CT
100
RN1110CT
IC - VI (ON)
10000
RN1110CT
IC - VI (OFF)
COLLECTOR CURRENT IC (mA)
10
25
COLLECTOR CURRENT IC (μA)
Ta = 100°C
1000
Ta = 100°C
100
25
-25
1
-25
EMITTER COMMON
VCE = 0.2V
EMITTER COMMON
VCE = 5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
0.1
1
10
100
INPUT VOLTAGE VI (ON) (V)
INPUT VOLTAGE VI (OFF) (V)
RN1111CT
100
IC - VI (ON)
10000
RN1111CT
IC - VI (OFF)
COLLECTOR CURRENT IC (mA)
Ta = 100°C
10
COLLECTOR CURRENT IC (μA)
1000
Ta = 100°C
100
EMITTER COMMON
VCE = 5V
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
25
1
-25
EMITTER COMMON
VCE = 0.2V
0.1
0.1
1
10
100
INPUT VOLTAGE VI (ON) (V)
25
-25
INPUT VOLTAGE VI (OFF) (V)
3
2014-03-01
RN1110CT, RN1111CT
RN1110CT
1000
hFE - IC
COLLECTOR - EMITTER SATURATION
VOLTAGE VCE (sat) (mV)
Ta = 100°C
1000
RN1110CT
VCE (sat) - IC
DC CURRENT GAIN hFE
25
-25
100
100
Ta = 100°C
10
-25
25
EMITTER COMMON
IC / IB = 20
0.1
1
10
100
EMITTER COMMON
VCE = 5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
COLLECTOR CURRENT IC (mA)
RN1111CT
1000
hFE - IC
1000
COLLECTOR - EMITTER SATURATION
VOLTAGE VCE (sat) (mV)
RN1111CT
VCE (sat) - IC
DC CURRENT GAIN hFE
Ta = 100°C
-25
100
25
100
Ta = 100°C
10
-25
25
EMITTER COMMON
IC / IB = 20
EMITTER COMMON
VCE = 5V
10
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
1
0.1
1
10
100
COLLECTOR CURRENT IC (mA)
4
2014-03-01
RN1110CT, RN1111CT
Type Name
Marking
Type name
1
RN1110CT
L9
2
3
Type name
RN1111CT
1
LF
2
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
5
2014-03-01
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