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RN1111CT(TPL3)

Description
tran npn cst3 20v 50a
CategoryDiscrete semiconductor    The transistor   
File Size174KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN1111CT(TPL3) Overview

tran npn cst3 20v 50a

RN1111CT(TPL3) Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)0.05 A
Minimum DC current gain (hFE)300
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.05 W
surface mountYES
Transistor component materialsSILICON
RN1110CT, RN1111CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)
RN1110CT, RN1111CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
Unit: mm
0.6±0.05
0.5±0.03
0.25±0.03
Complementary to RN2110CT, RN2111CT
0.25±0.03
Reducing the parts count enable the manufacture of ever more
compact equipment and save assembly cost.
0.35±0.02
Equivalent Circuit
C
0.15±0.03
0.65±0.02
0.05±0.03
Incorporating a bias resistor into a transistor reduces parts count.
B
R1
1.BASE
CST3
JEDEC
JEITA
TOSHIBA
2.EMITTER
3.COLLECOTR
E
2-1J1A
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
20
20
5
50
50
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Weight:0.75 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
0.38 +0.02
-0.03
0.05±0.03
2004-10
1
2014-03-01

RN1111CT(TPL3) Related Products

RN1111CT(TPL3) RN1110CT(TPL3) RN1110(T5L,F,T)
Description tran npn cst3 20v 50a tran npn cst3 20v 50a TRANS PREBIAS NPN 0.1W SSM
Maker Toshiba Semiconductor Toshiba Semiconductor -
Reach Compliance Code unknow unknow -
Maximum collector current (IC) 0.05 A 0.05 A -
Minimum DC current gain (hFE) 300 300 -
Number of components 1 1 -
Polarity/channel type NPN NPN -
Maximum power dissipation(Abs) 0.05 W 0.05 W -
surface mount YES YES -
Transistor component materials SILICON SILICON -
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