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RN2117(T5L,F,T)

Description
TRANS PREBIAS PNP 0.1W SSM
Categorysemiconductor    Discrete semiconductor   
File Size215KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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RN2117(T5L,F,T) Overview

TRANS PREBIAS PNP 0.1W SSM

RN2117(T5L,F,T) Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)10 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)30 @ 10mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 250µA,5mA
Current - collector cutoff (maximum)500nA
Frequency - Transition200MHz
Power - Max100mW
Installation typesurface mount
Package/casingSC-75,SOT-416
Supplier device packagingSSM
RN2114 RN2118
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2114, RN2115, RN2116, RN2117, RN2118
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1107 to RN1109
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2114
RN2115
RN2116
RN2117
RN2118
R1 (k )
1
2.2
4.7
10
47
R2 (k )
10
10
10
4.7
10
JEDEC
JEITA
TOSHIBA
2 2H1A
Weight: 2.4mg (typ.)
Absolute Maximum Ratings
(Ta
=
25 C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2114 to 2118
RN2114
RN2115
Emitter-base voltage
RN2116
RN2117
RN2118
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2114 to 2118
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
100
150
55 to 150
mA
mW
C
C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1994-08
1
2014-03-01

RN2117(T5L,F,T) Related Products

RN2117(T5L,F,T) RN2115,LF(CT RN2118MFV(TPL3) RN2118(T5L,F,T) RN2116,LF(CT RN2115,LF(CB RN2114(TE85L,F) RN2115(TE85LF)
Description TRANS PREBIAS PNP 0.1W SSM trans prebias pnp 50v 0.1W ssm trans prebias pnp 150mw vesm TRANS PREBIAS PNP 0.1W SSM TRANS PREBIAS PNP 50V 0.1W SSM TRANS PREBIAS PNP 50V 0.1W SSM TRANS PREBIAS PNP 0.1W SSM Small Signal Bipolar Transistor
Power - Max 100mW 100mW - 100mW 100mW 100mW - -

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