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RN2115,LF(CT

Description
trans prebias pnp 50v 0.1W ssm
Categorysemiconductor    Discrete semiconductor   
File Size215KB,8 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance  
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RN2115,LF(CT Overview

trans prebias pnp 50v 0.1W ssm

RN2115,LF(CT Parametric

Parameter NameAttribute value
Datasheets
RN2114-18
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
PackagingTape & Reel (TR)
Transistor TypePNP - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transiti200MHz
Power - Max100mW
Mounting TypeSurface Mou
Package / CaseSC-75, SOT-416
Supplier Device PackageSSM
Other NamesRN2115,LF(CBRN2115LF(CTTR
RN2114 RN2118
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2114, RN2115, RN2116, RN2117, RN2118
Switching, Inverter Circuit, Interface Circuit
and Driver Circuit Applications
Built-in bias resistors
Simplified circuit design
Fewer parts and simplified manufacturing process
Complementary to RN1107 to RN1109
Unit: mm
Equivalent Circuit and Bias Resistor Values
Type No.
RN2114
RN2115
RN2116
RN2117
RN2118
R1 (k )
1
2.2
4.7
10
47
R2 (k )
10
10
10
4.7
10
JEDEC
JEITA
TOSHIBA
2 2H1A
Weight: 2.4mg (typ.)
Absolute Maximum Ratings
(Ta
=
25 C)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2114 to 2118
RN2114
RN2115
Emitter-base voltage
RN2116
RN2117
RN2118
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2114 to 2118
I
C
P
C
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
50
50
5
6
7
15
25
100
100
150
55 to 150
mA
mW
C
C
V
Unit
V
V
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Start of commercial production
1994-08
1
2014-03-01

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