BSC048N025S G
OptiMOS
®
2 Power-Transistor
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
1
for target applications
• Logic level / N-channel
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Superior thermal resistance
• Avalanche rated
• dv /dt rated
• Pb-free lead plating; RoHS compliant
Type
BSC048N025S G
Package
PG-TDSON-8
Marking
48N025S
Product Summary
V
DS
R
DS(on),max
I
D
25
4.8
89
V
mΩ
A
PG-TDSON-8
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
C
=25 °C
T
C
=100 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
I
D,pulse
E
AS
dv /dt
V
GS
P
tot
T
C
=25 °C
T
A
=25 °C,
R
thJA
=45 K/W
2)
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.2
page 1
T
j
,
T
stg
T
C
=25 °C
3)
I
D
=50 A,
R
GS
=25
Ω
I
D
=50 A,
V
DS
=24 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
89
56
19
200
185
6
±20
63
2.8
-55 ... 150
55/150/56
2008-10-13
°C
mJ
kV/µs
V
W
Unit
A
BSC048N025S G
Parameter
Symbol Conditions
min.
Thermal characteristics
Thermal resistance, junction - case
R
thJC
bottom
top
Thermal resistance,
junction - ambient
R
thJA
minimal footprint
6 cm
2
cooling area
2)
-
-
-
-
-
-
2
18
62
45
K/W
Values
typ.
max.
Unit
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
V
GS(th)
I
DSS
V
DS
=V
GS
,
I
D
=35 µA
V
DS
=25 V,
V
GS
=0 V,
T
j
=25 °C
V
DS
=25 V,
V
GS
=0 V,
T
j
=125 °C
Gate-source leakage current
Drain-source on-state resistance
I
GSS
R
DS(on)
V
GS
=20 V,
V
DS
=0 V
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=50 A
Gate resistance
Transconductance
R
G
g
fs
|V
DS
|>2|I
D
|R
DS(on)max
,
I
D
=50 A
25
1.2
-
-
1.6
0.1
-
2
1
µA
V
-
-
-
-
-
39
10
10
6.3
4.0
1.2
79
100
100
7.9
4.8
-
-
Ω
S
nA
mΩ
1)
2)
J-STD20 and JESD22
2
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
3)
See figure 3
Rev. 1.2
page 2
2008-10-13
BSC048N025S G
Parameter
Symbol Conditions
min.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
4)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Gate charge total
Gate plateau voltage
Gate charge total, sync. FET
Output charge
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
I
S
I
S,pulse
V
SD
T
C
=25 °C
V
GS
=0 V,
I
F
=50 A,
T
j
=25 °C
V
R
=15 V,
I
F
=I
S
,
di
F
/dt =400 A/µs
-
-
-
-
-
0.87
50
200
1.1
V
A
Q
gs
Q
g(th)
Q
gd
Q
sw
Q
g
V
plateau
Q
g(sync)
Q
oss
V
DS
=0.1 V,
V
GS
=0 to 5 V
V
DD
=15 V,
V
GS
=0 V
V
DD
=15 V,
I
D
=25 A,
V
GS
=0 to 5 V
-
-
-
-
-
-
-
-
6
3
4
8
16
3.2
14
17
9
4
7
11
21
-
19
22
V
nC
nC
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DD
=15 V,
V
GS
=10 V,
I
D
=25 A,
R
G
=2.7
Ω
V
GS
=0 V,
V
DS
=15 V,
f
=1 MHz
-
-
-
-
-
-
-
2010
769
95
5.7
5
22
4
2670
1020
142
8
8
33
6
ns
pF
Values
typ.
max.
Unit
Reverse recovery charge
Q
rr
-
-
10
nC
4)
See figure 16 for gate charge parameter definition
Rev. 1.2
page 3
2008-10-13
BSC048N025S G
1 Power dissipation
P
tot
=f(T
C
)
2 Drain current
I
D
=f(T
C
);
V
GS
≥10
V
70
100
60
80
50
60
P
tot
[W]
40
30
I
D
[A]
40
20
20
10
0
0
40
80
120
160
0
0
40
80
120
160
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
10
3
4 Max. transient thermal impedance
Z
thJC
=f(t
p
)
parameter:
D
=t
p
/T
limited by on-state
resistance
10 µs
1 µs
10
2
0.5
Z
thJC
[K/W]
I
D
[A]
100 µs
0.2
0.1
0.05
0.02
0.01
1 ms
10
1
DC
single pulse
10
0
10
-1
10
0
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.2
page 4
2008-10-13
BSC048N025S G
5 Typ. output characteristics
I
D
=f(V
DS
);
T
j
=25 °C
parameter:
V
GS
200
10 V
6 Typ. drain-source on resistance
R
DS(on)
=f(I
D
);
T
j
=25 °C
parameter:
V
GS
18
3.2 V
3V
3.4 V
3.7 V
4V
160
4.5 V
15
12
R
DS(on)
[m
Ω
]
120
I
D
[A]
9
4.5 V
80
4V
6
3.7 V
10 V
3.4 V
3.2 V
3V
2.8 V
40
3
0
0
1
2
3
0
0
25
50
75
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(V
GS
); |V
DS
|>2|I
D
|R
DS(on)max
parameter:
T
j
200
8 Typ. forward transconductance
g
fs
=f(I
D
);
T
j
=25 °C
100
160
80
120
60
80
g
fs
[S]
40
40
150 °C
25 °C
I
D
[A]
20
0
0
1
2
3
4
5
0
0
25
50
75
V
GS
[V]
I
D
[A]
Rev. 1.2
page 5
2008-10-13
Embedded System
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