BSP92P
SIPMOS
Small-Signal-Transistor
Feature
•
P-Channel
•
Enhancement mode
•
Logic Level
•
dv/dt rated
Product Summary
V
DS
R
DS(on)
I
D
Drain
pin 2/4
Gate
pin1
Source
pin 3
1
3
2
VPS05163
-250
12
-0.26
PG-SOT223
4
V
Ω
A
•
Qualified according to AEC Q101
•
Halogenfree according to IEC61249221
Type
BSP92P
Package
PG-SOT223
Pb-free
Yes
Tape and Reel Information
H6327:
1000 pcs/reel
Marking
BSP92P
Packaging
Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
I
D
Value
-0.26
-0.23
Unit
A
Continuous drain current
T
A
=25°C
T
A
=70°C
Pulsed drain current
T
A
=25°C
I
D puls
-1.04
Reverse diode dv/dt
I
S
=-0.26A,
V
DS
=-200V, di/dt=-200A/µs,
T
jmax
=150°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1.8
W
Operating and storage temperature
T
j
,
T
stg
-55... +150
55/150/56
Class 1a
°C
IEC climatic category; DIN IEC 68-1
ESD Class
JESD22-A114-HBM
Rev 2.7
Page 1
2012-11-26
BSP92P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - soldering point
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
Symbol
min.
R
thJS
R
thJA
-
-
-
Values
typ.
15
max.
25
Unit
K/W
80
48
115
70
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0,
I
D
=-250µA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
R
DS(on)
R
DS(on)
-
-
-
-
-250
-1
Values
typ.
-
-1.5
max.
-
-2
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=-130µA
Zero gate voltage drain current
V
DS
=-250V,
V
GS
=0,
T
j
=25°C
V
DS
=-250V,
V
GS
=0,
T
j
=150°C
µA
-0.1
-10
-10
10
8.2
7.5
-0.2
-100
-100
20
15
12
nA
Ω
Gate-source leakage current
V
GS
=-20V,
V
DS
=0
Drain-source on-state resistance
V
GS
=-2.8V,
I
D
=-0.025A
Drain-source on-state resistance
V
GS
=-4.5V,
I
D
=-0.23A
Drain-source on-state resistance
V
GS
=-10V,
I
D
=-0.26A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.7
Page 2
2012-11-26
BSP92P
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inv. diode direct current, pulsed
I
SM
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0,
I
F
=-0.26A
V
R
=-125V,
I
F =
l
S
,
di
F
/dt=100A/µs
Symbol
Conditions
min.
Values
typ.
0.57
83
13
6
5
6
67
33
max.
-
104
16
8
8
9
101
50
Unit
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
|V
DS
|≥2*|I
D
|*R
DS(on)max
,
I
D
=-0.23A
V
GS
=0,
V
DS
=-25V,
f=1MHz
0.29
-
-
-
-
-
-
-
S
pF
V
DD
=-125V,
V
GS
=-10V,
I
D
=-0.26A,
R
G
=6Ω
ns
Q
gs
Q
gd
Q
g
V
DD
=-200V,
I
D
=-0.26A
-
-
-
-
-0.1
-1.9
-4.3
-2.9
-0.13 nC
-2.4
-5.4
-3.6
V
V
DD
=-200V,
I
D
=-0.26A,
V
GS
=0 to -10V
V
(plateau)
V
DD
=-200V,
I
D
=-0.26A
I
S
T
A
=25°C
-
-
-
-
-
-
-
-0.83
51
76
-0.26 A
-1.04
-1.21 V
64
95
ns
nC
Rev 2.7
Page 3
2012-11-26
BSP92P
1 Power dissipation
P
tot
=
f
(TA )
1.9
BSP 92 P
2 Drain current
I
D
=
f
(TA )
parameter: |V
GS
|
≥
10V
BSP 92 P
-0.28
W
1.6
1.4
A
-0.24
-0.22
-0.2
P
tot
I
D
20
40
60
80
100
120
1.2
1
0.8
0.6
0.4
0.2
-0.18
-0.16
-0.14
-0.12
-0.1
-0.08
-0.06
-0.04
-0.02
0
0
°C
160
0
0
20
40
60
80
100
120
°C
160
T
A
T
A
3 Safe operating area
I
D
=
f
(
V
DS
)
parameter :
D
= 0 ,
T
A = 25°C
-10
1
BSP 92 P
4 Transient thermal impedance
Z
thJA
=
f
(t
p
)
parameter :
D
=
t
p
/T
10
2
BSP 92 P
A
K/W
-10
0
t
p = 110.0µs
10
1
1 ms
/
I
D
-10
-1
DS
(
DS
10 ms
Z
thJA
10
0
D = 0.50
0.20
single pulse
0.10
0.05
0.02
0.01
10
-1
3
I
D
-10
-2
DC
-10
-3 -1
-10
R
on
)
=
V
-10
0
-10
1
-10
2
V
-10
10
-2 -5
-4
-3
-2
-1
0
1
2
10 10 10 10 10 10 10 10
s
10
4
V
DS
Rev 2.7
Page 4
t
p
2012-11-26
BSP92P
5 Typ. output characteristic
I
D
=
f
(V
DS
)
parameter:
T
j =25°C, -V
GS
1
6 Typ. drain-source on resistance
R
DS(on)
=
f
(I
D
)
parameter:
V
GS
;
T
j =25°C, -V
GS
18
A
0.8
0.7
0.6
0.5
0.4
10V
6V
5V
4.6V
4.2V
3.6V
3.4V
3.2V
2.8V
2.6V
Ω
14
2.6V 2.8V
3.2V
R
DSON
-I
D
12
10
8
6
0.3
0.2
0.1
0
0
4
2
0
0
10V
6V
5V
4.6V
4.2V
3.6V
3.4V
1
2
3
4
5
6
7
8
V
10
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
-V
DS
A
-I
D
1
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
); |V
DS |
≥
2 x |I
D
| x
R
DS(on)max
parameter:
T
j
= 25 °C
1
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter:
T
j =25°C
1
A
S
-I
D
0.6
g
fs
V
0.6
0.4
0.4
0.2
0.2
0
0
1
2
4
0
0
0.2
0.4
0.6
A
1
-V
GS
Rev 2.7
Page 5
-I
D
2012-11-26
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