IRLD014 datasheet, PDF - EEWORLD Datasheet

IRLD014: DescriptionPOWER MOSFEET; CategoryDiscrete semiconductor The transistor; File Size174KB，6 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/

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POWER MOSFEET

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	International Rectifier （ Infineon ）
package instruction	IN-LINE, R-PDIP-T3
Contacts	4
Reach Compliance Code	compliant
Other features	LOGIC LEVEL COMPATIBLE
Configuration	SINGLE
Maximum drain current (Abs) (ID)	1.7 A
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PDIP-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	1.3 W
Maximum power dissipation(Abs)	1.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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