SPI35N10
SPP35N10,SPB35N10
SIPMOS
Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
P-TO262-3-1
P-TO263-3-2
Product Summary
V
DS
R
DS(on)
I
D
100
44
35
P-TO220-3-1
V
A
Type
SPP35N10
SPB35N10
SPI35N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4123
Q67042-S4103
Q67042-S4124
Marking
35N10
35N10
35N10
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25°C
T
C
=100°C
Symbol
I
D
Value
35
26.4
Unit
A
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
140
245
6
±20
150
-55... +175
55/175/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
Reverse diode dv/dt
Gate source voltage
Power dissipation
T
C
=25°C
I
S
=35A,
V
DS
=80V,
di/dt=200A/µs,
T
jmax
=175°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
I
D
=35 A ,
V
DD
=25V,
R
GS
=25
Page 1
2004-08-06
m
SPI35N10
SPP35N10,SPB35N10
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
F)
Symbol
min.
R
thJC
R
thJA
R
thJA
-
-
-
-
Values
typ.
-
-
-
-
max.
1
62
62
40
Unit
K/W
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Symbol
min.
V
(BR)DSS
V
GS(th)
I
DSS
-
-
I
GSS
R
DS(on)
-
-
100
2.1
Values
typ.
-
3
max.
-
4
Unit
V
Gate threshold voltage,
V
GS
=
V
DS
I
D
=83µA
Zero gate voltage drain current
V
DS
=100V,
V
GS
=0V,
T
j
=25°C
V
DS
=100V,
V
GS
=0V,
T
j
=125°C
µA
0.01
1
1
36
1
100
100
44
nA
m
Gate-source leakage current
V
GS
=20V,
V
DS
=0V
V
GS
=10V,
I
D
=26.4A
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
2004-08-06
Drain-source on-state resistance
SPI35N10
SPP35N10,SPB35N10
Electrical Characteristics,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Dynamic Characteristics
,
I
D
=26.4A
Symbol
Conditions
min.
Values
typ.
23
1180
245
137
12.2
63
39
23
max.
-
1570
326
206
18.3
95
59
34
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f=1MHz
V
DD
=50V,
V
GS
=10V,
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
Q
gd
Q
g
V
DD
=80V,
I
D
=35A,
V
GS
=0 to 10V
V
DD
=80V,
I
D
=35A
V
(plateau)
V
DD
=80V,
I
D
=35A
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
V
SD
t
rr
Q
rr
V
GS
=0V,
I
F
=35A
V
R
=50V,
I
F =
l
S
,
di
F
/dt=100A/µs
I
S
I
SM
T
C
=25°C
Page 3
I
D
=35A,
R
G
=7
Transconductance
g
fs
V
DS
2*I
D
*R
DS(on)max
12
-
-
-
-
-
-
-
S
pF
ns
-
-
-
-
6.5
27
49
6.1
8.6
41
65
-
nC
V
-
-
-
-
-
-
-
0.95
80
230
35
140
1.25
100
290
A
V
ns
nC
2004-08-06
SPI35N10
SPP35N10,SPB35N10
1 Power dissipation
P
tot
=
f
(
T
C
)
160
SPP35N10
2 Drain current
I
D
=
f
(
T
C
)
parameter:
V
GS
10 V
38
SPP35N10
A
W
32
120
28
P
tot
100
I
D
24
20
16
80
60
12
40
8
20
4
0
0
0
0
20
40
60
80
100 120 140 160
°C
190
20
40
T
C
3 Safe operating area
I
D
=
f
(
V
DS
)
4 Transient thermal impedance
Z
thJC
=
f
(
t
p
)
parameter :
D
= 0 ,
T
C
= 25 °C
10
3
SPP35N10
parameter :
D
=
t
p
/
T
10
1
SPP35N10
K/W
A
10
0
t
p = 2.5µs
10
2
Z
thJC
I
D
10
-1
10 µs
D
DS
/
I
DS
(on
10
1
=
V
100 µs
10
-2
)
R
1 ms
10
-3
single pulse
10 ms
10
0 -1
10
DC
10
0
10
1
10
2
V
10
3
10
-4 -7
10
10
-6
V
DS
Page 4
60
80
100 120 140 160
°C
190
T
C
D = 0.50
0.20
0.10
0.05
0.02
0.01
10
-5
10
-4
10
-3
10
-2
s
10
0
t
p
2004-08-06
SPI35N10
SPP35N10,SPB35N10
5 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=25°C
6 Typ. drain-source on resistance
R
DS(on)
=
f
(
I
D
)
parameter:
t
p
= 80 µs
90
e
d
c
parameter:
V
GS
500
a
A
70
60
50
40
VGS[V]=
a= 5
b= 6
c= 8
d= 10
e= 12
R
DS(on)
I
D
300
200
30
20
10
0
0
b
100
a
1
2
3
4
5
6
V
8
V
DS
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 µs
60
8 Typ. forward transconductance
g
fs
= f(
I
D
);
T
j
=25°C
parameter:
g
fs
24
A
g
fs
40
I
D
30
20
10
0
2
3
4
5
V
7
V
GS
Page 5
0
0
10
20
m
b
V
GS
[V]=
a= 5
b= 6
c= 8
d= 10
e= 12
c
d
e
30
40
50
60
70
80
A
100
I
D
S
20
18
16
14
12
10
8
6
4
2
0
0
5
10
15
20
25
A
35
I
D
2004-08-06
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