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SPB35N10 G

Description
MOSFET N-CH 100V 35A D2PAK
Categorysemiconductor    Discrete semiconductor   
File Size483KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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SPB35N10 G Overview

MOSFET N-CH 100V 35A D2PAK

SPB35N10 G Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C35A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)10V
Rds On (maximum value) when different Id, Vgs44 milliohms @ 26.4A, 10V
Vgs (th) (maximum value) when different Id4V @ 83µA
Gate charge (Qg) at different Vgs (maximum value)65nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)1570pF @ 25V
FET function-
Power dissipation (maximum)150W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typesurface mount
Supplier device packagingPG-TO263-3-2
Package/casingTO-263-3, D²Pak (2-lead + tab), TO-263AB
SPI35N10
SPP35N10,SPB35N10
SIPMOS
Power-Transistor
Feature
N-Channel
Enhancement mode
175°C operating temperature
Avalanche rated
dv/dt rated
P-TO262-3-1
P-TO263-3-2
Product Summary
V
DS
R
DS(on)
I
D
100
44
35
P-TO220-3-1
V
A
Type
SPP35N10
SPB35N10
SPI35N10
Package
P-TO220-3-1
P-TO263-3-2
P-TO262-3-1
Ordering Code
Q67042-S4123
Q67042-S4103
Q67042-S4124
Marking
35N10
35N10
35N10
Maximum Ratings,at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
T
C
=25°C
T
C
=100°C
Symbol
I
D
Value
35
26.4
Unit
A
Pulsed drain current
T
C
=25°C
I
D puls
E
AS
dv/dt
V
GS
P
tot
T
j ,
T
stg
140
245
6
±20
150
-55... +175
55/175/56
mJ
kV/µs
V
W
°C
Avalanche energy, single pulse
Reverse diode dv/dt
Gate source voltage
Power dissipation
T
C
=25°C
I
S
=35A,
V
DS
=80V,
di/dt=200A/µs,
T
jmax
=175°C
Operating and storage temperature
IEC climatic category; DIN IEC 68-1

I
D
=35 A ,
V
DD
=25V,
R
GS
=25
Page 1
2004-08-06






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SPB35N10 G Related Products

SPB35N10 G SPB35N10 SPB35N10T
Description MOSFET N-CH 100V 35A D2PAK 35 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB MOSFET N-CH 100V 35A D2PAK
FET type N channel - N channel
technology MOSFET (metal oxide) - MOSFET (metal oxide)
Drain-source voltage (Vdss) 100V - 100V
Current - Continuous Drain (Id) at 25°C 35A(Tc) - 35A(Tc)
Drive voltage (maximum Rds On, minimum Rds On) 10V - 10V
Rds On (maximum value) when different Id, Vgs 44 milliohms @ 26.4A, 10V - 44 milliohms @ 26.4A, 10V
Vgs (th) (maximum value) when different Id 4V @ 83µA - 4V @ 83µA
Gate charge (Qg) at different Vgs (maximum value) 65nC @ 10V - 65nC @ 10V
Vgs (maximum value) ±20V - ±20V
Input capacitance (Ciss) at different Vds (maximum value) 1570pF @ 25V - 1570pF @ 25V
Power dissipation (maximum) 150W(Tc) - 150W(Tc)
Operating temperature -55°C ~ 175°C(TJ) - -55°C ~ 175°C(TJ)
Installation type surface mount - surface mount
Supplier device packaging PG-TO263-3-2 - PG-TO263-3-2
Package/casing TO-263-3, D²Pak (2-lead + tab), TO-263AB - TO-263-3, D²Pak (2-lead + tab), TO-263AB
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