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FJN3311RBU

Description
TRANS PREBIAS NPN 300MW TO92-3
Categorysemiconductor    Discrete semiconductor   
File Size24KB,3 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Environmental Compliance
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FJN3311RBU Overview

TRANS PREBIAS NPN 300MW TO92-3

FJN3311RBU Parametric

Parameter NameAttribute value
Transistor typeNPN - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)40V
Resistor - Substrate (R1)22 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)100 @ 1mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 1mA,10mA
Current - collector cutoff (maximum)100nA(ICBO)
Frequency - Transition250MHz
Power - Max300mW
Installation typeThrough hole
Package/casingTO-226-3, TO-92-3 standard body (!--TO-226AA)
Supplier device packagingTO-92-3
FJN3311R
FJN3311R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=22KΩ)
• Complement to FJN4311R
1
TO-92
1. Emitter 2. Collector 3. Base
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
40
40
5
100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
E
R
B
Equivalent Circuit
C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
R
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Test Condition
I
C
=100µA, I
E
=0
I
E
=1mA, I
B
=0
V
CB
=30V, I
E
=0
V
CE
=5V, I
C
=1mA
I
C
=10mA, I
B
=1mA
V
CB
=10V, I
E
=0
f=1MHz
V
CE
=10V, I
C
=5mA
15
3.7
250
22
29
100
Min.
40
40
0.1
600
0.3
V
pF
MHz
KΩ
Typ.
Max.
Units
V
V
µA
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002

FJN3311RBU Related Products

FJN3311RBU
Description TRANS PREBIAS NPN 300MW TO92-3
Transistor type NPN - Pre-biased
Current - Collector (Ic) (Maximum) 100mA
Voltage - collector-emitter breakdown (maximum) 40V
Resistor - Substrate (R1) 22 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value) 100 @ 1mA,5V
Vce saturation value (maximum value) when different Ib,Ic 300mV @ 1mA,10mA
Current - collector cutoff (maximum) 100nA(ICBO)
Frequency - Transition 250MHz
Power - Max 300mW
Installation type Through hole
Package/casing TO-226-3, TO-92-3 standard body (!--TO-226AA)
Supplier device packaging TO-92-3

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