BUK7226-75A
N-channel TrenchMOS standard level FET
Rev. 02 — 22 February 2008
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package using
Nexperia
General Purpose Automotive (GPA) TrenchMOS
technology. This product has been designed and qualified to the appropriate AEC
standard for use in automotive critical applications.
1.2 Features
175
°C
rated
Q101 compliant
Low on-state resistance
Standard level compatible
1.3 Applications
12 V, 24 V and 42 V loads
General purpose power switching
Automotive systems
Motors, lamps and solenoids
1.4 Quick reference data
Table 1.
V
DS
I
D
P
tot
T
j
R
DSon
Quick reference
Conditions
T
j
≥
25
°C;
T
j
≤
175
°C
V
GS
= 10 V; T
mb
= 25
°C;
see
Figure 1
and
4
T
mb
= 25
°C;
see
Figure 2
[1]
Symbol Parameter
drain-source voltage
drain current
total power dissipation
junction temperature
drain-source on-state
resistance
Min
-
-
-
-55
Typ
-
-
-
-
22
Max
75
45
158
175
26
Unit
V
A
W
°C
mΩ
Static characteristics
V
GS
= 10 V; I
D
= 25 A;
T
j
= 25
°C;
see
Figure 12
and
13
-
Avalanche ruggedness
I
D
= 45 A; V
sup
≤
75 V;
E
DS(AL)S
non-repetitive
drain-source avalanche R
GS
= 50
Ω;
V
GS
= 10 V;
energy
T
j(init)
= 25
°C;
unclamped
inductive load
[1]
Capped at 45 A due to bondwire.
-
-
215
mJ
Nexperia
BUK7226-75A
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pin
1
2
3
mb
Pinning
Symbol
G
D
S
D
Description
gate
drain
source
mounting base;
connected to drain
2
1
3
G
mbb076
Simplified outline
mb
Graphic symbol
D
S
SOT428 (DPAK)
3. Ordering information
Table 3.
Ordering information
Package
Name
BUK7226-75A
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads (one lead
cropped)
Version
SOT428
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
V
DGR
V
GS
I
D
I
DM
P
tot
T
stg
T
j
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
total power dissipation
storage temperature
junction temperature
I
D
= 45 A; V
sup
≤
75 V; R
GS
= 50
Ω;
V
GS
= 10 V; T
j(init)
= 25
°C;
unclamped
inductive load
see
Figure 3
[2][3]
[4]
Conditions
T
j
≥
25
°C;
T
j
≤
175
°C
R
GS
= 20 kΩ
T
mb
= 25
°C;
V
GS
= 10 V; see
Figure 1
and
4
T
mb
= 100
°C;
V
GS
= 10 V; see
Figure 1
T
mb
= 25
°C;
t
p
≤
10
μs;
pulsed; see
Figure 4
T
mb
= 25
°C;
see
Figure 2
[1]
Min
-
-
-20
-
-
-
-
-55
-55
-
Max
75
75
20
45
38
215
158
175
175
215
Unit
V
V
V
A
A
A
W
°C
°C
mJ
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source avalanche
energy
E
DS(AL)R
repetitive drain-source
avalanche energy
Source-drain diode
I
S
I
SM
[1]
-
-
J
source current
peak source current
Capped at 45 A due to bondwire.
T
mb
= 25
°C
t
p
≤
10
μs;
pulsed; T
mb
= 25
°C
[1]
-
-
45
215
A
A
BUK7226-75A_2
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 22 February 2008
2 of 13
Nexperia
BUK7226-75A
N-channel TrenchMOS standard level FET
[2]
[3]
[4]
Single-pulse avalanche rating limited by maximum junction temperature of 175
°C.
Repetitive avalanche rating limited by an average junction temperature of 170
°C.
Refer to application note AN10273 for further information.
60
I
D
(A)
(1)
003aac178
120
P
der
(%)
80
03aa16
40
20
40
0
0
50
100
150
T
mb
(°C)
200
0
0
50
100
150
T
mb
(
°
C)
200
V
GS
10V
P
der
=
P
tot
P
tot
(25°C )
× 100 %
(1) Capped at 45 A due to bondwire.
Fig 1. Continuous drain current as a function of
mounting base temperature
10
2
I
AV
(A)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
003aac181
(1)
10
(2)
(3)
1
10
-1
10
-3
10
-2
10
-1
1
t
AV
(ms)
10
(1) Single pulse;T
j
= 25
°C.
(2) Single pulse;T
j
= 150
°C.
(3) Repetitive.
Fig 3. Single-pulse and repetitive avalanche rating; avalanche current as a function of avalanche time
BUK7226-75A_2
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 22 February 2008
3 of 13
Nexperia
BUK7226-75A
N-channel TrenchMOS standard level FET
10
3
I
D
(A)
10
2
(1)
003aac179
Limit R
DSon
= V
DS
/ I
D
10
µs
100
µs
1 ms
10 ms
DC
100 ms
10
1
10
-1
1
10
10
2
V
DS
(V)
10
3
T
mb
= 25
°C; I
DM
is single pulse
(1) Capped at 45 A due to bondwire.
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
5. Thermal characteristics
Table 5.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
thermal resistance
from junction to
mounting base
Conditions
minimum footprint; FR4 board
Min
-
Typ
70
Max
-
Unit
K/W
R
th(j-mb)
see
Figure 5
-
-
1
K/W
BUK7226-75A_2
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 22 February 2008
4 of 13
Nexperia
BUK7226-75A
N-channel TrenchMOS standard level FET
1
δ
= 0.5
Z
th(j-mb)
(K/W) 0.2
10
-1
0.1
0.05
0.02
003aac180
10
-2
single shot
P
δ
=
t
p
T
t
p
T
t
10
-3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
t
p
(s)
1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
6. Characteristics
Table 6.
Symbol
V
(BR)DSS
Characteristics
Parameter
drain-source
breakdown voltage
Conditions
I
D
= 0.25 mA; V
GS
= 0 V;
T
j
= -55
°C
I
D
= 0.25 mA; V
GS
= 0 V;
T
j
= 25
°C
V
GS(th)
gate-source threshold I
D
= 1 mA; V
DS
= V
GS
;
voltage
T
j
= 175
°C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
; T
j
= 25
°C;
see
Figure 11
I
D
= 1 mA; V
DS
= V
GS
;
T
j
= -55
°C;
see
Figure 11
I
DSS
drain leakage current
V
DS
= 75 V; V
GS
= 0 V; T
j
= 25
°C
V
DS
= 75 V; V
GS
= 0 V;
T
j
= 175
°C
I
GSS
gate leakage current
V
DS
= 0 V; V
GS
= 20 V; T
j
= 25
°C
V
DS
= 0 V; V
GS
= -20 V;
T
j
= 25
°C
R
DSon
drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A;
T
j
= 175
°C;
see
Figure 12
and
13
V
GS
= 10 V; I
D
= 25 A; T
j
= 25
°C;
see
Figure 12
and
13
Source-drain diode
V
SD
source-drain voltage
I
S
= 25 A; V
GS
= 0 V; T
j
= 25
°C;
see
Figure 16
-
0.85
1.2
V
Min
70
75
1
2
-
-
-
-
-
-
Typ
-
-
-
3
-
0.05
-
2
2
-
Max
-
-
-
4
4.4
10
500
100
100
54
Unit
V
V
V
V
V
μA
μA
nA
nA
mΩ
Static characteristics
-
22
26
mΩ
BUK7226-75A_2
©
Nexperia B.V. 2017. All rights reserved
Product data sheet
Rev. 02 — 22 February 2008
5 of 13
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