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2KBP10M-M4/51

Description
DIODE GPP 2A 1000V KBPM
CategoryDiscrete semiconductor    diode   
File Size91KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

2KBP10M-M4/51 Overview

DIODE GPP 2A 1000V KBPM

2KBP10M-M4/51 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionR-PSIP-W4
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage1000 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
JESD-30 codeR-PSIP-W4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature165 °C
Minimum operating temperature-55 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage1000 V
surface mountNO
Terminal formWIRE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Base Number Matches1
2KBP005M thru 2KBP10M, 3N253 thru 3N259
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
~
~
+
Case Style KBPM
+
~
~
e4
• High case dielectric strength
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case:
KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals:
Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity:
As marked on body
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
2A
50 V to 1000 V
60 A
5 µA
1.1 V
165 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Max. average forward output rectified current
at T
A
= 55 °C
Peak forward surge current single half
sine-wave superimposed on rated load
Rating for fusing (t < 8.3 ms)
Operating junction and
storage temperature range
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
2KBP
005M
3N253
50
35
50
2KBP
01M
3N254
100
70
100
2KBP
02M
3N255
200
140
200
2KBP
04M
3N256
400
280
400
2.0
60
15
- 55 to + 165
2KBP
06M
3N257
600
420
600
2KBP
08M
3N258
800
560
800
2KBP
10M
3N259
1000
700
1000
V
V
V
A
A
A
2
s
°C
UNIT
Document Number: 88532
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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