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FJN4309RTA

Description
TRANS PREBIAS PNP 300MW TO92-3
CategoryDiscrete semiconductor    The transistor   
File Size31KB,4 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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FJN4309RTA Overview

TRANS PREBIAS PNP 300MW TO92-3

FJN4309RTA Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionCYLINDRICAL, O-PBCY-T3
Manufacturer packaging code135AR
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Other featuresBUILT IN BIAS RESISTOR
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
FJN4309R
FJN4309R
Switching Application
(Bias Resistor Built In)
• Switching circuit, Inverter, Interface circuit, Driver Circuit
• Built in bias Resistor (R=4.7KΩ)
• Complement to FJN3309R
1
TO-92
1. Emitter 2. Collector 3. Base
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
a
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
-40
-40
-5
-100
300
150
-55 ~ 150
Units
V
V
V
mA
mW
°C
°C
E
B
R
Equivalent Circuit
C
Electrical Characteristics
T
a
=25°C unless otherwise noted
Symbol
BV
CBO
BV
CEO
I
CBO
h
FE
V
CE
(sat)
C
ob
f
T
R
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Output Capacitance
Current Gain Bandwidth Product
Input Resistor
Test Condition
I
C
= -100µA, I
E
=0
I
C
= -1mA, I
B
=0
V
CB
= -30V, I
E
=0
V
CE
= -5V, I
C
= -1mA
I
C
= -10mA, I
B
= -1mA
V
CB
= -10V, I
E
=0
f=1MHz
V
CE
= -10V, I
C
= -5mA
3.2
5.5
200
4.7
6.2
100
Min.
-40
-40
-0.1
600
-0.3
V
pF
MHz
KΩ
Typ.
Max.
Units
V
V
µA
©2002 Fairchild Semiconductor Corporation
Rev. A, August 2002

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